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MMST6427

Document number: DS30166 Rev. 11 - 2

1 of 5

www.diodes.com

August 2011

MMST6427

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features

• 40V Darlington Transistor

• Epitaxial Planar Die Construction

• Ideal for Low Power Amplification and Switching

• High Current Gain

• Ultra-Small Surface Mount Package

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, "Green" Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

MMST6427-7-F K1D 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For Packaging Details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015

Code X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K1D= Product Type Marking Code

YM = Date Code Marking

Y = Year ex: X = 2010

M = Month ex: 9 = September

K1D

Top View

Device symbol

Pin-out Top view

Summary of content (5 pages)

PAGE 1
MMST6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • • • • Mechanical Data • • 40V Darlington Transistor Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Ultra-Small Surface Mount Package Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4.
PAGE 2
MMST6427 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 4) Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collecto
PAGE 3
MMST6427 1.10 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.05 IC = 1000 IB 1.00 TA = -50°C 0.95 0.90 0.85 0.80 TA = 25°C 0.75 0.70 0.65 0.60 TA = 150°C 0.55 0.50 0.45 0.40 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1 1,000,000 1.6 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 1.5 100,000 10,000 1,000 100 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current TA = -50°C 1.
PAGE 4
MMST6427 Package Outline Dimensions A SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J L D Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C E X MMST6427 Document number: DS30166 Rev. 11 - 2 1.9 1.0 E 4 of 5 www.diodes.
PAGE 5
MMST6427 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.