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123456
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PDS4200H
Document number: DS30596 Rev. 10 - 2
2 of 6
www.diodes.com
October 2012
© Diodes Incorporated
PDS4200H
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 V
RMS Reverse Voltage
V
R
(
RMS
)
141 V
Average Rectified Output Current (See also figure 5)
I
O
4 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
I
FSM
100 A
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Thermal Resistance Junction to Soldering Point
R
θ
JS
⎯
3.0
°C/W
Thermal Resistance Junction to Ambient Air (Note 5)
R
θ
JA
80
⎯
°C/W
Thermal Resistance Junction to Ambient Air (Note 6)
R
θ
JA
65
⎯
°C/W
Thermal Resistance Junction to Ambient Air (Note 7)
R
θ
JA
45
⎯
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +175
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 8)
V
(
BR
)
R
200
⎯ ⎯
V
I
R
= 5μA
Forward Voltage
V
F
⎯
⎯
⎯
⎯
⎯
⎯
0.76
⎯
0.785
0.61
0.84
0.68
0.82
0.59
0.84
0.64
0.89
0.75
V
I
F
= 3A, T
S
= +25°C
I
F
= 3A, T
S
= +150°C
I
F
= 4A, T
S
= +25°C
I
F
= 4A, T
S
= +150°C
I
F
= 8A, T
S
= +25°C
I
F
= 8A, T
S
= +150°C
Reverse Leakage Current (Note 8)
I
R
⎯
⎯
0.2
0.8
1
4
μA
mA
T
S
= +25°C, V
R
= 200V
T
S
= +150°C, V
R
= 200V
Reverse Recovery Time
t
rr
⎯ ⎯
25 ns
I
F
= 0.5A, I
R
= 1.0A
I
RR
= 0.25A (see Figure 8)
Notes: 5. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
6. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
7. Polymide PCB, 2 oz. Copper. Cathode pad dimensions 9.4mm x 7.2mm. Anode pad dimensions 2.7mm x 1.6mm.
8. Short duration test pulse used to minimize self-heating effect.