Manual
SBR is a registered trademark of Diodes Incorporated.
SBR10U45D1Q
Document number: DS36131 Rev. 2 - 2
2 of 5
www.diodes.com
June 2013
© Diodes Incorporated
SBR10U45D1Q
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
RM
45 V
Average Rectified Output Current @T
C
= +140°C I
O
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
125 A
Repetitive Peak Avalanche Power (1µs, +25°C)
P
ARM
6000 W
Non-Repetitive Avalanche Energy
(T
J
= +25°C, I
AS
= 12A, L = 10mH)
E
AS
620 mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (Note 5)
R
Θ
JC
R
Θ
JA
2.0
34
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
V
F
—
—
—
0.47
0.57
—
V
I
F
= 10A, T
J
= +25°C
I
F
= 10A, T
J
= +125°C
Leakage Current (Note 6)
I
R
—
—
-
13
0.3
—
mA
V
R
= 45V, T
J
= +25°C
V
R
= 45V, T
J
= +125°C
Notes: 5. Polymide PCB 2 oz. Copper, minimum recommended pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found
on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 1 2 3 4 5 6 7 8 9 10
Figure 1 Forward Power Dissipation
I , AVERAGE FORWARD CURRENT (A)
F(AV)
P , POWER DISSIPATION (W)
D
0.0001
0.001
0.01
0.1
1
10
0 200 400 600 800
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I , INSTANTANEOUS FORWARD CURRENT (A)
F
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A