Manual

SBR is a registered trademark of Diodes Incorporated.
SBR10U45D1Q
Document number: DS36131 Rev. 2 - 2
3 of 5
www.diodes.com
June 2013
© Diodes Incorporated
SBR10U45D1Q
NEW PRODUCT
Figure 3 Typical Reverse Characteristics
0 5 10 15 20 25 30 35 40 45
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
0.1
1
10
100
1,000
10,000
100,000
I , INSTANTANEOUS REVERSE CURRENT (uA)
R
T = -55°C
A
T = 2C
A
T = 8C
A
T = 125°C
A
T = 150°C
A
Figure 4 Total Capacitance vs. Reverse Voltage
0.1 1 10 100
V , DC REVERSE VOLTAGE (V)
R
100
1,000
10,000
100,000
C , TOTAL CAPACITANCE (pF)
T
f = 1MHz
Figure 5 Forward Current Derating Curve
0
2
4
6
8
10
12
0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
I , AVERAGE FORWARD CURRENT (A)
F(AV)
R = 34°C/W
JAθ
R =
JAθθ
R
JC
50
25 50
75 100 125
150
P , AVALANCHE PEAK PULSE POWER
DERATING PERCENTAGE (%)
ARM
T , JUNCTION TEMPERATURE (°C)
Figure 6 Pulse Derating Curve
J
0
25
75
175 200
100
125
0
P , MA
XIMUM AVALANCHE POWER (W)
ARM
T , PULSE DURATION (µS)
P
Figure 7 Maximum Avalanche Power Curve, Per Element
10000
10 100 1000 10000
1000
100
200
400
600
800
1,000
0
t1, PULSE DURATION TIME (sec)
Figure 8 Single Pulse Maximum Power Dissipation
P , PEAK TRANSIENT POIWER (W)
(PK)
Single Pulse
R = 65 C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
J A JA(t)
°