Owner's manual

SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3  JANUARY 1996 ✪
COMPLEMENTARY TYPE  SXTA92
PARTMARKING DETAIL  SID
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
300 V
Collector-Emitter Voltage V
CEO
300 V
Emitter-Base Voltage V
EBO
6V
Continuous Collector Current I
C
500 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300 V I
C
=1mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
6V
I
E
=100µA, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
µA
V
CB
=200V, I
E
=0
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=6V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=20mA, I
B
=2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 V I
C
=20mA, I
B
=2mA*
Static Forward Current
Transfer Ratio
h
FE
25
40
40
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
Transition
Frequency
f
T
50 MHz I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance C
obo
6pFV
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA42 datasheet.
SXTA42
C
C
B
E
SOT89
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