Instruction Manual
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
4 of 6
www.diodes.com
November 2011
© Diodes Incorporated
TB0640M - TB3500M
I , OFF-STATE CURRENT (uA)
(DRM)
T , JUNCTION TEMPERATURE (°C)
Fig. 1 Off-State Current vs. Junction Temperature
J
0.001
0.01
1
0.1
10
100
-25
0
25 50 75 100 125 150
V = 50V
DRM
0.9
T , JUNCTION TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature
J
0.95
1
1.05
1.1
1.15
1.2
-50
-25 0 25
50
75 100
125
150 175
NORMALIZED BREAKDOWN VOLTAGE
1
1.05
0.95
-50
NORMALIZED BREAKDOWN VOLTAGE
1.1
-25
0
75
50
25
125
100
175
150
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature
J
1
10
100
1
1.5 3
2.52
4
3.5
5
4.5
I,
O
N-S
T
A
T
E
C
U
R
R
EN
T
(A)
T
V , ON-STATE VOLTAGE (V)
Fig. 4 On-State Current vs. On-State Voltage
T
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.4
1.3
1.2
-50 -25
0
25 50 100
75
125
N
O
R
MALIZED
H
O
LDIN
G
C
U
R
R
EN
T
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs. Junction Temperature
0.1
1
110100
NORMALIZED CAPACITANCE
V , REVERSE VOLTAGE (V)
Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias
R