Manual

ZVN4106F
Document number: DS33360 Rev. 3 - 2
3 of 6
www.diodes.com
July 2012
© Diodes Incorporated
Z
V
N4106F
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V
V
GS
= 0V, I
D
= 10mA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
—
—
10
50
µA
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
A
= +125°C
Gate-Source Leakage
I
GSS
— — 100 nA
V
GS
= ±20V, V
DS
= 0V
On-State Drain Current
I
D
(
on
)
1 — - A
V
GS
= 10V, V
DS
= 15V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
1.3 — 3 V
V
DS
= V
GS
, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS (on)
— —
2.5
5
Ω
V
GS
= 10V, I
D
= 500mA
V
GS
= 5V, I
D
= 200mA
Forward Transconductance
g
fs
150 — - mS
V
DS
= 25V, I
D
= 250mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— — 35 pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— — 25 pF
Reverse Transfer Capacitance
C
rss
— — 8 pF
Turn-On Delay Time
t
D
(
on
)
— — 5 ns
V
DS
= 25V, I
D
= 150mA
Turn-On Rise Time
t
r
— — 7 ns
Turn-Off Delay Time
t
D
(
off
)
— — 6 ns
Turn-Off Fall Time
t
f
— — 8 ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.