Manual

ZVN4306A
Document number: DS33367 Rev. 4 - 2
3 of 6
www.diodes.com
January 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZVN4306A
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
60 - - V
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- -
1
20
µA
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
A
= 125°C
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
On-State Drain Current
I
D
(
on
)
12 - - A
V
GS
= 10V, V
DS
= 10V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS
(
th
)
1.3 - 3 V
V
DS
= V
GS
, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS (on)
-
0.22
0.32
0.33
0.45
Ω
V
GS
= 10V, I
D
= 3A
V
GS
= 5V, I
D
= 1.5A
Forward Transconductance
g
fs
700 - - mS
V
DS
= 10V, I
D
= 3A
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance
C
iss
- - 350
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- - 140
pF
Reverse Transfer Capacitance
C
rss
- - 30
pF
Turn-On Delay Time (Note 5)
t
d
(
on
)
- - 8
ns
V
DD
= 25V, I
D
= 3A, V
GEM
= 10V
Turn-On Rise Time (Note 5)
t
r
- - 25
ns
Turn-Off Delay Time (Note 5)
t
d
(
off
)
- - 30
ns
Turn-Off Fall Time (Note 5)
t
f
- - 16
ns
Notes: 4. Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2%
5. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator