Instruction Manual

ManualsBrandsDiodes ManualsHardwareZVP4525E6

ISSUE 1 - MARCH 2001

ZVP4525E6

SUMMARY

(

DESCRIPTION

This 250V enhancement mode P-channel MOSFET provides users with a

competitive specification offering efficient power handling capability, high

impedance and is free from thermal runaway and thermally induced

secondary breakdown. Applications benefiting from this device include a

variety of Telecom and general high voltage circuits.

SOT89 and SOT223 versions are also available.

FEATURES

•

High voltage

•

Low on-resistance

• Fast switching speed

• Low gate drive

• Low threshold

• Complementary N-channel Type ZVN4525E6

• SOT23-6 package

APPLICATIONS

•

Earth Recall and dialling switches

•

Electronic hook switches

•

High Voltage Power MOSFET Drivers

•

Telecom call routers

•

Solid state relays

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

TAPE WIDTH (mm) QUANTITY

PER REEL

ZVP4525TA 7 8mm embossed 3000 units

ZVP4525TC 13 8mm embossed 10000 units

DEVICE MARKING

•

P52

250V P-CHANNEL ENHANCEMENT MODE MOSFET

Top View

SOT23-6

Summary of content (8 pages)

PAGE 1
ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT23-6 SOT89 and SOT223 versions are also available.
PAGE 2
ZVP4525E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -250 V Gate Source Voltage V GS ±40 V Continuous Drain Current (V GS =10V; TA=25°C)(a) (V GS =10V; TA=70°C)(a) ID ID -197 -157 mA mA -1 A Pulsed Drain Current (c) I DM Continuous Source Current (Body Diode) IS Pulsed Source Current (Body Diode) -0.75 A I SM -1 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 8.
PAGE 3
ZVP4525E6 CHARACTERISTICS ISSUE 1 - MARCH 2001 3
PAGE 4
ZVP4525E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Drain-Source Breakdown Voltage V (BR)DSS -285 Zero Gate Voltage Drain Current I DSS -30 Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs MAX. UNIT CONDITIONS. STATIC -250 -0.8 80 V I D =-1mA, V GS =0V -500 nA V DS =-250V, V GS =0V ±1 ±100 nA V GS =±40V, V DS =0V -1.5 -2.
PAGE 5
ZVP4525E6 TYPICAL CHARACTERISTICS ISSUE 1 - MARCH 2001 5
PAGE 6
ZVP4525E6 CHARACTERISTICS ISSUE 1 - MARCH 2001 6
PAGE 7
TEST CIRCUITS ISSUE 1 - MARCH 2001 7 ZVP4525E6
PAGE 8
ZVP4525E6 PAD LAYOUT DETAILS PACKAGE DIMENSIONS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Zetex plc.