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SEMICONDUCTORS

SUMMARY

CEO

= -20V : R

SAT

= 31m ; I

= -3.5A

DESCRIPTION

Packaged in the SOT23-6 outline this new 5

generation low saturation 20V PNP transistor offers

extremely low on state losses making it ideal for use in

DC-DC circuits and various driving and power

management functions.

FEATURES

•

3.5 Amps continuous current

•

Extremely low saturation voltage (-70mV max @ 1A/100mA )

•

Up to 10 Amps peak current

• Very low saturation voltages

APPLICATIONS

•

DC - DC converters

•

Battery charging

•

Power switches

•

Motor control

•

Power management functions

DEVICE MARKING

•

ZX5T2E6

ISSUE 1 - MAY 2004

20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6

PINOUT

TOP VIEW

DEVICE REEL

SIZE

TAPE WIDTH

QUANTITY PER REEL

ZX5T2E6TA

7” 8mm embossed 3,000

ZX5T2E6TC 13” 8mm embossed 10,000

ORDERING INFORMATION

Summary of content (6 pages)

PAGE 1
ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT23-6 • 3.
PAGE 2
ZX5T2E6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage BV CBO -25 Collector-emitter voltage BV CEO -20 V Emitter-base voltage BV EBO -7.5 V Continuous collector current IC -3.5 A Peak pulse current I CM -10 A Power dissipation at T A = 2 5 ° C (a) Linear derating factor PD 1.1 W 8.8 mW/° C (b) PD Power dissipation at T A = 2 5 ° C 1.7 W 13.
PAGE 3
ZX5T2E6 CHARACTERISTICS ISSUE 1 - MAY 2004 3 SEMICONDUCTORS
PAGE 4
ZX5T2E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated) PARAMETER SYMBOL Collector-base breakdown voltage BV CBO MIN. TYP. -25 -49 MAX. UNIT CONDITIONS V I C = -1 0 0 ␮A Collector-emitter breakdown voltage BV CEO -20 -43 V I C = -1 0 mA * Emitter-base breakdown voltage BV EBO -7.5 -8.
PAGE 5
ZX5T2E6 TYPICAL CHARACTERISTICS ISSUE 1 - MAY 2004 5 SEMICONDUCTORS
PAGE 6
ZX5T2E6 PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM Millimeters Min Inches Max Min Max DIM Millimeters Min Inches Max Min Max A 0.90 1.45 0.035 0.057 E 2.20 3.20 0.0866 0.118 A1 0.00 0.15 0.00 0.006 E1 1.30 1.80 0.0511 0.071 A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.024 b 0.20 0.50 0.008 0.020 e 0.95 REF 0.037 REF C 0.09 0.26 0.003 0.010 e1 1.