Instruction Manual

ZX5T851A
SEMICONDUCTORS
ISSUE 1 - NOVEMBER 2003
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
150 190 V I
C
=100␮A
Collector-emitter breakdown voltage BV
CER
150 190 V I
C
=1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BV
CEO
60 80 V I
C
=10mA*
Emitter-base breakdown voltage BV
EBO
78.1 VI
E
=100␮A
Collector cut-off current I
CBO
20
0.5
nA
␮A
V
CB
=120V
V
CB
=120V, T
amb
=100⬚C
Collector cut-off current I
CER
Rⱕ1k⍀
20
0.5
nA
␮A
V
CB
=120V
V
CB
=120V, T
amb
=100⬚C
Emitter cut-off current I
EBO
10 nA V
EB
=6V
Collector-emitter saturation voltage V
CE(SAT)
18
40
45
95
170
30
55
65
130
210
mV
mV
mV
mV
mV
I
C
=100mA, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=5A, I
B
=200mA*
Base-emitter saturation voltage V
BE(SAT)
950 1050 mV I
C
=4A, I
B
=200mA*
Base-emitter turn-on voltage V
BE(ON)
840 950 mV I
C
=4A, V
CE
=1V*
Static forward current transfer ratio h
FE
100
100
55
20
200
200
105
40
300
I
C
=10mA, V
CE
=1V*
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
Transition frequency f
T
130 MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance C
OBO
31 pF V
CB
=10V, f=1MHz*
Switching times t
ON
t
OFF
42
760
ns
ns
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.