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SUMMARY

(BR)DSS

=20V; R

DS(ON)

= 0.1V; I

=3.2A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilise a unique

structure that combines the benefits of low on-resistance with fast switching

speed. This makes them ideal for high efficiency, low voltage, power

management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

(inches)

TAPE WIDTH (mm) QUANTITY

PER REEL

ZXM62N02E6TA 7 8mm embossed 3000 units

ZXM62N02E6TC 13 8mm embossed 10000 units

DEVICE MARKING

• 2N02

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SOT23-6

ZXM62N02E6

ISSUE 1 - JUNE 2004

Summary of content (7 pages)

PAGE 1
ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)= 0.1V; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXM62N02E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS ± 12 V Continuous Drain Current (V GS=4.5V; T A=25°C)(b) (V GS=4.5V; T A=70°C)(b) ID 3.2 2.6 A Pulsed Drain Current (c) I DM 18 A Continuous Source Current (Body Diode) (b) IS 2.1 A Pulsed Source Current (Body Diode) I SM 18 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.
PAGE 3
ZXM62N02E6 Max Power Dissipation (Watts) CHARACTERISTICS 100 ID - Drain Current (A) Refer Note (a) 10 1 0.1 DC 1s 100ms 10ms 1ms 100us 0.1 10 1 100 0.5 0 0 20 40 80 60 100 120 Safe Operating Area Derating Curve 160 140 120 Thermal Resistance (°C/W) Thermal Resistance (°C/W) Refer Note (b) Refer Note (a) 1 T - Temperature (°C) Refer Note (b) 60 20 1.5 VDS - Drain-Source Voltage (V) 80 40 2 D=0.5 D=0.2 D=0.1 D=0.05 0 0.0001 0.001 Single Pulse 0.01 0.
PAGE 4
ZXM62N02E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance g fs 20 V I D=250µA, V GS=0V 1 µA V DS=20V, V GS=0V 100 nA V GS=± 12V, V DS=0V V I D =250µA, V DS= V GS Ω Ω V GS=4.5V, I D=2.
PAGE 5
ZXM62N02E6 TYPICAL CHARACTERISTICS 100 100 +150 C ID - Drain Current (A) 5V 4.5V 4V VGS 3V 3.5V 10 2.5V 2V 1 0.1 1 0.1 10 ID - Drain Current (A) 10 2.5V 2V 1 1.5V 100 Output Characteristics T=150°C T=25°C 1 1.5 VGS - 2 2.5 3 4 3.5 1.8 1.6 1.0 VGS=VDS ID=250uA 0.8 VGS(th) 0.6 0.4 -100 ISD - Reverse Drain Current (A) 10 0 100 50 150 200 Normalised RDS(on) and VGS(th) v Temperature VGS=3V VGS=5V 1 -50 Tj - Junction Temperature (°C) 1 0.1 VGS=4.5V ID =2.2A 1.
PAGE 6
ZXM62N02E6 TYPICAL CHARACTERISTICS Vgs=0V f=1Mhz 800 C - Capacitance (pF) VGS - Gate-Source Voltage (V) 900 700 Ciss Coss Crss 600 500 400 300 200 100 0 0.1 1 10 100 5 ID=2.2A 4.5 4 3.5 VDS=16V 3 2.5 2 1.5 1 0.
PAGE 7
ZXM62N02E6 PACKAGE DIMENSIONS b PAD LAYOUT DETAILS e L 2 E1 E DATUM A a e1 D C A A2 DIM A1 Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.