Owner manual

ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
4 of 11
www.diodes.com
December 2010
© Diodes Incorporated
ZXMC3
A
MC
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics – Q1 N-Channel @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
I
D
= 250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
- - 0.5
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
1.0 - 3.0 V
I
D
= 250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10)
R
DS (ON)
-
0.100 0.120
Ω
V
GS
= 10V, I
D
= 2.5A
0.140 0.180
V
GS
= 4.5V, I
D
= 2.0A
Forward Transconductance (Note 10 & 11)
g
fs
- 3.5 - S
V
DS
= 10V, I
D
= 2.5A
Diode Forward Voltage (Note 10)
V
SD
- 0.85 0.95 V
I
S
= 1.7A, V
GS
= 0V
Reverse Recover Time (Note 11)
t
r
r
- 17.7
-
ns
I
S
= 2.5A, di/dt= 100A/µs
Reverse Recover Charge (Note 11)
Q
r
r
- 13.0
-
nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
- 190 -
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 38 -
pF
Reverse Transfer Capacitance
C
rss
- 20 -
pF
Total Gate Charge (Note 12)
Q
g
- 2.3 -
nC
V
GS
= 4.5V
V
DS
= 15V
I
D
= 2.5A
Total Gate Charge (Note 12)
Q
g
- 3.9 -
nC
V
GS
= 10V
Gate-Source Charge (Note 12)
Q
g
s
- 0.6 -
nC
Gate-Drain Charge (Note 12)
Q
g
d
- 0.9 -
nC
Turn-On Delay Time (Note 12)
t
D
(
on
)
- 1.7 -
ns
V
DS
= 15V, I
D
= 2.5A
V
GS
= 10V, R
G
= 6Ω
Turn-On Rise Time (Note 12)
t
r
- 2.3 -
ns
Turn-Off Delay Time (Note 12)
t
D
(
off
)
- 6.6 -
ns
Turn-Off Fall Time (Note 12)
t
f
- 2.9 -
ns
Notes: 10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.