Owner manual

ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
7 of 11
www.diodes.com
December 2010
© Diodes Incorporated
ZXMC3
A
MC
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics – Q2 P-Channel @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V
I
D
= -250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
- - -0.5
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
-1.0 - -3.0 V
I
D
= -250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 13)
R
DS (ON)
-
0.150 0.210
Ω
V
GS
= -10V, I
D
= -1.4A
0.280 0.330
V
GS
= -4.5V, I
D
= -1.1A
Forward Transconductance (Note 13 & 14)
g
fs
- 2.48 - S
V
DS
= -15V, I
D
= -1.4A
Diode Forward Voltage (Note 13)
V
SD
- -0.85 -0.95 V
I
S
= -1.1A, V
GS
= 0V
Reverse Recover Time (Note 14)
t
r
r
- 18.6
-
ns
I
S
= -0.95A, di/dt = 100A/µs
Reverse Recover Charge (Note 14)
Q
r
r
- 14.8
-
nC
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
C
iss
- 206 -
pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 59.3 -
pF
Reverse Transfer Capacitance
C
rss
- 49.2 -
pF
Total Gate Charge (Note 15)
Q
g
- 3.8 -
nC
V
GS
= -4.5V
V
DS
= -15V
I
D
= -1.4A
Total Gate Charge (Note 15)
Q
g
- 6.4 -
nC
V
GS
= -10V
Gate-Source Charge (Note 15)
Q
g
s
- 0.69 -
nC
Gate-Drain Charge (Note 15)
Q
g
d
- 2.0 -
nC
Turn-On Delay Time (Note 15)
t
D
(
on
)
- 1.5 -
ns
V
DS
= -15V, I
D
= -1A
V
GS
= -10V, R
G
= 6Ω
Turn-On Rise Time (Note 15)
t
r
- 2.8 -
ns
Turn-Off Delay Time (Note 15)
t
D
(
off
)
- 11.3 -
ns
Turn-Off Fall Time (Note 15)
t
f
- 7.5 -
ns
Notes: 13. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
14. For design aid only, not subject to production testing.
15. Switching characteristics are independent of operating junction temperature.