User guide

ManualsBrandsDiodes ManualsHardwareZXMC4A16DN8

SEMICONDUCTORS

SUMMARY

N-Channel = V

(BR)DSS

= 40V : R

DS(on)

= 0.05 ; I

= 5.2A

P-Channel = V

(BR)DSS

= -40V : R

DS(on)

= 0.06 ; I

= -4.7A

DESCRIPTION

This new generation of trench MOSFETs from Zetex

utilises a unique structure that combines the benefits

of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage,

power management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

APPLICATIONS

•

Motor drive

•

LCD backlighting

DEVICE MARKING

•

ZXMC

4A16

ZXMC4A16DN8

ISSUE 1 - NOVEMBER 2004

COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET

PINOUT

TOP VIEW

DEVICE REEL

SIZE

TAPE WIDTH

QUANTITY PER

REEL

ZXMC4A16DN8TA

7” 12mm 500

ZXMC4A16DN8TC 13” 12mm 2,500

ORDERING INFORMATION

Summary of content (10 pages)

PAGE 1
ZXMC4A16DN8 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMC4A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-channel P-channe| UNIT Drain-source voltage V DSS 40 -40 V Gate-source voltage V GS ⫾20 ⫾20 V Continuous drain current ID (V GS = 10V; T A =25°C) (b)(d) 5.2 -4.7 A (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) 4.1 -3.8 A 4.0 -3.6 A I DM 24 -23 A Pulsed drain current (c) (b) IS 2.5 2.
PAGE 3
ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 3 SEMICONDUCTORS
PAGE 4
ZXMC4A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. V (BR)DSS 40 TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V I D = 250␮A, V GS =0V Zero Gate Voltage Drain Current I DSS 0.5 ␮A V DS =40V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V Gate-Source Threshold Voltage Static Drain-Source On-State Resistance 1.0 V GS(th) (1) V R DS(on) 0.050 ⍀ V GS = 10V, I D = 4.5A V GS = 4.5V, I D = 3.2A 0.
PAGE 5
ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 5 SEMICONDUCTORS
PAGE 6
ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 6
PAGE 7
ZXMC4A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. V (BR)DSS -40 TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V I D = -250␮A, V GS =0V Zero Gate Voltage Drain Current I DSS -1.0 ␮A V DS = -40V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V Gate-Source Threshold Voltage Static Drain-Source On-State Resistance -1.0 V GS(th) (1) V R DS(on) 0.060 ⍀ VGS = -10V, ID = -3.8A V GS = -4.5V, ID = -2.9A 0.
PAGE 8
ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 SEMICONDUCTORS 8
PAGE 9
ZXMC4A16DN8 TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2004 9 SEMICONDUCTORS
PAGE 10
ZXMC4A16DN8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.