User guide

ZXMC4A16DN8
SEMICONDUCTORS
ISSUE 1 - NOVEMBER 2004
7
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-40 V I
D
= -250␮A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-1.0 ␮AV
DS
= -40V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-1.0 V I
D
= -250␮A, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.060
0.100
⍀ V
GS
= -10V, I
D
= -3.8A
V
GS
= -4.5V, I
D
= -2.9A
Forward Transconductance
(1) (3)
g
fs
6.8 S V
DS
= -15V, I
D
= -3.8A
DYNAMIC
(3)
Input Capacitance C
iss
1000 pF
V
DS
= -20V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
180 pF
Reverse Transfer Capacitance C
rss
160 pF
SWITCHING
(2) (3)
Turn-On-Delay Time t
d(on)
3.7 ns
V
DD
= -20V, I
D
= -1A
R
G
≅ 6.0⍀,V
GS
= 10V
Rise Time t
r
5.5 ns
Turn-Off Delay Time t
d(off)
33 ns
Fall Time t
f
18 ns
Gate Charge Q
g
15 nC V
DS
= -20V, V
GS
= -5V
I
D
= -3.8A
Total Gate Charge Q
g
26 nC
V
DS
= -20V, V
GS
= -10V
I
D
= -3.8A
Gate-Source Charge Q
gs
3.2 nC
Gate Drain Charge Q
gd
7.3 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.86 -0.95 V T
j
=25°C, I
S
= -3.4A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
27 ns
T
j
=25°C, I
S
= -3A,
di/dt=100A/␮s
Reverse Recovery Charge
(3)
Q
rr
25 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.