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SUMMARY

N-Channel V

(BR)DSS

= 60V; R

DS(ON)

= 0.045 ;I

= 5.1A

P-Channel V

(BR)DSS

= -60V; R

DS(ON)

= 0.055 ;I

= -4.8A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure

thatcombinesthebenefits oflow on-resistancewith fastswitching speed.This

makes them ideal for high efficiency, low voltage, power management

applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

• Low profile SOIC package

APPLICATIONS

•

Motor drive

•

LCD backlighting

DEVICE MARKING

ZXMC

6A09

ZXMC6A09DN8

ISSUE 4 - MAY 2005

COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET

DEVICE REEL TAPE

WIDTH

QUANTITY

PER REEL

ZXMC6A09DN8TA 7

’‘ 12mm 500 units

ZXMC6A09DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

Q2 = P-CHANNELQ1 = N-CHANNEL

SO8

Top view

PINOUT

Summary of content (10 pages)

PAGE 1
ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMC6A09DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; @V GS =10V; @V GS =10V; T A =25⬚C (b)(d) T A =25⬚C (b)(d) T A =25⬚C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (b) (c) N-Channe l P-Channel UNIT V DSS 60 -60 V V GS ⫾20 ⫾20 V ID 5.1 4.1 3.9 -4.8 -3.8 -3.7 A A I DM 25 -23 A IS 3.5 -3.3 A I SM 25.4 -23.8 A (a)(d) PD 1.
PAGE 3
ZXMC6A09DN8 CHARACTERISTICS ISSUE 4 - MAY 2005 3
PAGE 4
ZXMC6A09DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Source Threshold Voltage Static Drain-Source On-State Resistance V GS(th) (1) Forward Transconductance (1)(3) V I D =250µA, V GS =0V 1.
PAGE 5
ZXMC6A09DN8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Source Threshold Voltage Static Drain-Source On-State Resistance V GS(th) (1) Forward Transconductance (1)(3) V I D =-250µA, V GS =0V -1.
PAGE 6
ZXMC6A09DN8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 6
PAGE 7
ZXMC6A09DN8 1800 1600 1400 1200 1000 800 600 400 200 0 VGS = 0V f = 1MHz VGS Gate-Source Voltage (V) C Capacitance (pF) N-CHANNEL TYPICAL CHARACTERISTICS CISS COSS CRSS 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 ID = 3.
PAGE 8
ZXMC6A09DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 8
PAGE 9
ZXMC6A09DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 9
PAGE 10
ZXMC6A09DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.27 BSC Min Max 0.