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SEMICONDUCTORS

SUMMARY

(BR)DSS

= 100V; R

DS(ON)

= 0.25 I

= 2.1A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure

that combines the benefits of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage, power management

applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

APPLICATIONS

•

DC - DC converters

•

Power management functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

•

ZXMN

10A08D

ZXMN10A08DN8

ISSUE 4 - JANUARY 2005

100V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN10A08DN8TA 7” 12mm 500 units

ZXMN10A08DN8TC 13” 12mm 2,500 units

ORDERING INFORMATION

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Summary of content (7 pages)

PAGE 1
ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN10A08DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source voltage V DSS Gate source voltage V GS Continuous drain current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) ID Pulsed drain current (c) I DM Continuous source current (body diode) Pulsed source current (body diode) (c) (b) IS LIMIT UNIT 100 V 20 V 2.1 1.7 1.6 A 9 A 2.6 A I SM 9 A Power dissipation at T A =25°C (a) Linear derating factor PD 1.
PAGE 3
ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 3 SEMICONDUCTORS
PAGE 4
ZXMN10A08DN8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. 100 TYP. MAX. UNIT CONDITIONS. STATIC Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate-body leakage I GSS Gate-source threshold voltage V GS(th) Static drain-source on-state resistance (1) R DS(on) Forward transconductance (1)(3) g fs DYNAMIC V I D =250␮A, V GS =0V V DS =100V, V GS =0V 0.
PAGE 5
ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 5 SEMICONDUCTORS
PAGE 6
ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 SEMICONDUCTORS 6
PAGE 7
ZXMN10A08DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.