User Manual

ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
3 of 7
www.diodes.com
March 2012
© Diodes Incorporated
ZXMN10A08E6
NEW PRODUCT
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100
⎯ ⎯
V
I
D
= 250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
0.5
μA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
2.0
⎯
4.0 V
I
D
= 250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
⎯ ⎯
0.25
Ω
V
GS
= 10V, I
D
= 3.2A
0.30
V
GS
= 6V, I
D
= 2.6A
Forward Transconductance (Notes 8 & 10)
g
fs
⎯
5.0
⎯
S
V
DS
= 15V, I
D
= 3.2A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.87 0.95 V
I
S
= 3.2A, V
GS
= 0V
Reverse recovery time (Note 10)
t
r
r
27
⎯
ns
I
S
= 1.2A, di/dt = 100A/μs
Reverse recovery charge (Note 10)
Q
r
r
⎯
32
⎯
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯
405
⎯
pF
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
28.2
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
14.2
⎯
pF
Gate Charge (Note 9)
Q
g
⎯
4.2
⎯
nC
V
GS
= 5V, V
DS
= 50V
I
D
= 1.2A
Total Gate Charge (Note 9)
Q
g
⎯
7.7
⎯
nC
V
GS
= 10V, V
DS
= 50V
I
D
= 1.2A
Gate-Source Charge (Note 9)
Q
g
s
⎯
1.8
⎯
nC
Gate-Drain Charge (Note 9)
Q
g
d
⎯
2.1
⎯
nC
Turn-On Delay Time (Note 9)
t
d
(
on
)
⎯
3.4
⎯
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1.2A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 9)
t
r
⎯
2.2
⎯
ns
Turn-Off Delay Time (Note 9)
t
d
(
off
)
⎯
8
⎯
ns
Turn-Off Fall Time (Note 9)
t
f
⎯
3.2
⎯
ns
Notes: 8. Measured under pulsed conditions. Width 300μs. Duty cycle 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.