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ZXMN10A11G

Document Number DS32056 Rev. 6 - 2

1 of 8

www.diodes.com

January 2010

Product Line o

Diodes Incorporated

ZXMN10A11G

ADVANCE INFORMATION

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

= 25°C

100V

350mΩ @ V

= 10V

2.4A

450mΩ @ V

= 6.0V

2.1A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

• Motor control

• DC-DC Converters

• Power management functions

• Uninterrupted power supply

Features and Benefits

• Fast switching speed

• Low gate drive

• Low input capacitance

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

Ordering Information

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN10A11GTA See below 7 12 1,000

Marking Information

Top View

SOT223

ZXMN = Product Type Marking Code, Line 1

10A11 = Product Type Marking Code, Line 2

ZXMN

10A11

Equivalent Circuit

Pin Out - Top View

Summary of content (8 pages)

PAGE 1
A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 2.4A 450mΩ @ VGS = 6.0V 2.
PAGE 2
A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) TA = 70°C (Note 2) (Note 1) (Note 3) (Note 2) (Note3 ) ID IDM IS ISM Value 100 ±20 2.4 1.9 1.7 7.9 4.6 7.9 Unit V V Value 2.0 16 3.9 31 62.5 32.0 9.
PAGE 3
A Product Line of Diodes Incorporated Thermal Characteristics Max Power Dissipation (W) ID Drain Current (A) 10 RDS(on) Limited 1 DC 100m 1s 100ms 10ms 10m 1ms Single Pulse T amb=25°C 1 100µs 10 100 2.0 1.6 1.2 0.8 0.4 0.0 VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Safe Operating Area 70 Tamb=25°C 60 Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION ZXMN10A11G 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.
PAGE 4
A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Unit Test Condition 100 ⎯ ⎯ V ID = 250μA, VGS = 0V ⎯ ⎯ 1 μA VDS = 100V, VGS = 0V IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V VGS(th) 2.0 ⎯ 4.
PAGE 5
A Product Line of Diodes Incorporated Typical Characteristics 10 10 10V ID Drain Current (A) 5V 4.5V 1 4V VGS 0.1 3.5V 0.01 5V 4.5V 1 4V 3.5V 0.1 3V VGS 2.5V 0.01 0.1 1 1 10 0.1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C T = 25°C VDS = 10V 0.1 3 4 5 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 VGS Gate-Source Voltage (V) VGS = 10V ID = 2.
PAGE 6
A Product Line of Diodes Incorporated ZXMN10A11G ADVANCE INFORMATION Typical Characteristics - continued Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN10A11G Document Number DS32056 Rev. 6 - 2 Switching time test circuit 6 of 8 www.diodes.
PAGE 7
A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G Package Outline Dimensions DIM A A1 A2 b b2 C Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33 Inches Min Max 0.071 0.0008 0.004 0.0610 0.0649 0.026 0.033 0.114 0.122 0.009 0.013 DIM D e e1 E E1 L Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.
PAGE 8
A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).