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SUMMARY

(BR)DSS

= 20V; R

DS(ON)

= 0.12 I

= 3.1A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that

combines the benefits of low on-resistance with fast switching speed. This makes

them ideal for high efficiency, low voltage, power management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23-6 package

APPLICATIONS

•

DC - DC Converters

•

Power management functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

•

2A1

ZXMN2A01E6

ISSUE 3 - FEBRUARY 2006

20V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN2A01E6TA 7” 8mm 3000 units

ZXMN2A01E6TC 13” 8mm 10000 units

ORDERING INFORMATION

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Summary of content (7 pages)

PAGE 1
ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN2A01E6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS LIMIT Gate Source Voltage V GS Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) Pulsed Drain Current (c) ID I DM 11 A Continuous Source Current (Body Diode) (b) IS 2.4 A Pulsed Source Current (Body Diode) (c) I SM 11 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 8.
PAGE 3
ZXMN2A01E6 CHARACTERISTICS ISSUE 3 - FEBRUARY 2006 3
PAGE 4
ZXMN2A01E6 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 20 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS. STATIC I D =250µA, V GS =0V 1 µA V DS =20V, V GS =0V 100 nA 0.7 V 0.12 Ω 0.225 Ω Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) V g fs 6.
PAGE 5
ZXMN2A01E6 TYPICAL CHARACTERISTICS ISSUE 3 - FEBRUARY 2006 5
PAGE 6
ZXMN2A01E6 VGS = 0V f = 1MHz 400 VGS Gate-Source Voltage (V) C Capacitance (pF) TYPICAL CHARACTERISTICS CISS COSS 200 0 0.1 CRSS 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 4.5 4.0 ID = 4A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.
PAGE 7
ZXMN2A01E6 PACKAGE OUTLINE PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118 A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069 A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.002 b 0.35 0.50 0.014 0.019 e 0.95 REF 0.037 REF C 0.09 0.