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SUMMARY

(BR)DSS

= 20V; R

DS(ON)

= 0.055 I

= 4.6A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure

that combines the benefits of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage, power management

applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23-6 package

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

•

2A3

ZXMN2A03E6

ISSUE 4 - SEPTEMBER 2005

20V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN2A03E6TA 7” 8mm 3000 units

ZXMN2A03E6TC 13” 8mm 10000 units

ORDERING INFORMATION

Top View

PINOUT

Summary of content (7 pages)

PAGE 1
ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN2A03E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage V GS Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) Pulsed Drain Current (c) LIMIT 20 UNIT V 12 V ID 4.6 3.7 3.7 A I DM 16 A IS I SM 2.7 A 16 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 1.7 13.
PAGE 3
ZXMN2A03E6 TYPICAL CHARACTERISTICS ISSUE 4 - SEPTEMBER 2005 3
PAGE 4
ZXMN2A03E6 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 20 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS. STATIC I D =250µA, V GS =0V 1 ␮A V DS =20V, V GS =0V 100 nA 0.7 V 0.055 ⍀ 0.
PAGE 5
ZXMN2A03E6 TYPICAL CHARACTERISTICS 7V 10 2V VGS 1 7V T = 150°C 3V 2.5V 1.5V 0.1 3V 10 2.5V 2V 1 1.5V ID Drain Current (A) ID Drain Current (A) T = 25°C VGS 0.1 0.1 1 1V 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 T = 25°C 1 VDS = 10V 0.1 1 RDS(on) Drain-Source On-Resistance (Ω) Normalised RDS(on) and VGS(th) T = 150°C 2 VGS = 4.5V ID = 7.2A 1.4 RDS(on) 1.2 1.0 0.8 VGS(th) 0.
PAGE 6
ZXMN2A03E6 TYPICAL CHARACTERISTICS 1400 C Capacitance (pF) 1200 VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz 1000 800 CISS COSS 600 CRSS 400 200 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 4.5 4.0 ID = 7.2A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.
PAGE 7
ZXMN2A03E6 PACKAGE OUTLINE PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimetres Inches Millimetres DIM Inches DIM Min Max Min Max Min Max Min Max A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118 A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069 A2 0.90 1.30 b 0.35 0.50 0.035 0.051 L 0.10 0.60 0.004 0.002 0.014 0.019 e 0.95 REF 0.037 REF C 0.09 0.