Owner manual

ZXMN2A03E6
ISSUE 4 - SEPTEMBER 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
20 V
I
D
=250µA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 ␮AV
DS
=20V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=⫾12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.7 V
I
D
=250µA, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.055
0.100
⍀
⍀
V
GS
=4.5V, I
D
=7.2A
V
GS
=2.5V, I
D
=4.6A
Forward Transconductance (1)(3) g
fs
13 S V
DS
=10V,I
D
=7.2A
DYNAMIC (3)
Input Capacitance C
iss
837 pF
V
DS
=10 V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
168 pF
Reverse Transfer Capacitance C
rss
90 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
4.7 ns
V
DD
=10V, I
D
=1A
R
G
=6.0Ω,V
GS
=4.5V
Rise Time t
r
5.7 ns
Turn-Off Delay Time t
d(off)
18.5 ns
Fall Time t
f
10.5 ns
Total Gate Charge Q
g
8.2 nC
V
DS
=10V,V
GS
=4.5V,
I
D
=7.2A
Gate-Source Charge Q
gs
2.3 nC
Gate-Drain Charge Q
gd
2.0 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.85 0.95 V T
J
=25°C, I
S
=4.1A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
12 ns T
J
=25°C, I
F
=1.9A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Q
rr
4.9 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.