Manual

ManualsBrandsDiodes ManualsHardwareZXMN2A04DN8

SUMMARY

(BR)DSS

= 20V; R

DS(ON)

= 0.025 ;I

= 7.7A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast switching

speed. This makes them ideal for high efficiency, low voltage, power

management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

APPLICATIONS

•

DC - DC converters

•

Power management functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

ZXMN

2A04D

ZXMN2A04DN8

ISSUE 1 - JULY 2004

SEMICONDUCTORS

DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL TAPE

WIDTH

QUANTITY

PER REEL

ZXMN2A04DN8TA 7

’‘ 12mm 500 units

ZXMN2A04DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

SO8

Top view

PINOUT

Summary of content (7 pages)

PAGE 1
ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN2A04DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V V GS ⫾12 V ID 7.7 A (V GS =10V; T A =70°C) (b) (d) 6.2 A (V GS =10V; T A =25°C) (a) (d) 5.9 A Gate Source Voltage Continuous Drain Current (V GS =10V; T A =25°C) (b) (d) Pulsed Drain Current (c) I DM 38 A Continuous Source Current (Body Diode) (b) IS 2.9 A Pulsed Source Current (Body Diode) (c) I SM 38 A Power Dissipation at T A =25°C (a) (d) PD 1.
PAGE 3
ZXMN2A04DN8 CHARACTERISTICS ISSUE 1 - JULY 2004 3 SEMICONDUCTORS
PAGE 4
ZXMN2A04DN8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. 20 TYP. MAX. UNIT CONDITIONS STATIC V I D =250␮A, V GS =0V Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS 0.5 ␮A Gate-Body Leakage I GSS 100 nA V I =250␮A, V DS = V GS 0.025 Ω V GS =4.5V, I D =5.9A 0.035 ⍀ V GS =2.5V, I D =5A V DS =10V,I D =5.9A Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State R DS(on) 0.
PAGE 5
ZXMN2A04DN8 TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 5 SEMICONDUCTORS
PAGE 6
ZXMN2A04DN8 TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 SEMICONDUCTORS 6
PAGE 7
ZXMN2A04DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES ⍜ MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 L H D E MILLIMETERS DIM Pin 1 A c e 0.050 BSC 1.27 BSC b e A1 Seating Plane CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.