Instruction Manual

ManualsBrandsDiodes ManualsHardwareZXMN2A14F

SEMICONDUCTORS

SUMMARY

(BR)DSS

= 20V : R

(

)=0.06 ; I

= 4.1A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that

combines the benefits of low on-resistance with fast switching speed. This makes

them ideal for high efficiency, low voltage, power management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23 package

APPLICATIONS

•

DC-DC converters

•

Power management functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

•

214

ZXMN2A14F

ISSUE 3 - SEPTEMBER 2007

20V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN2A14FTA 7” 8mm 3000 units

ORDERING INFORMATION

PINOUT

Summary of content (8 pages)

PAGE 1
ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 20V : RDS(on)=0.06 ; ID= 4.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN2A14F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GS ⫾12 V Continuous Drain Current @ V GS =4.5V; T A =25°C (b) @ V GS =4.5V; T A =70°C (b) @ V GS =4.5V; T A =25°C (a) ID 4.1 A 3.3 A 3.4 A A (c) Pulsed Drain Current Continuous Source Current (Body Diode) (b) I DM 19 IS 1.
PAGE 3
ZXMN2A14F CHARACTERISTICS ISSUE 3 - SEPTEMBER 2007 3 SEMICONDUCTORS
PAGE 4
ZXMN2A14F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. 20 TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS V I D =250␮A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 ␮A V DS =20V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =⫾12V, V DS =0V Gate-Source Threshold Voltage V GS(th) V Static Drain-Source On-State R DS(on) 0.7 (1) 0.060 ⍀ I =250␮A, V DS = V GS D V GS =4.5V, I D =3.4A 0.110 ⍀ V GS =2.
PAGE 5
ZXMN2A14F TYPICAL CHARACTERISTICS ISSUE 3 - SEPTEMBER 2007 5 SEMICONDUCTORS
PAGE 6
ZXMN2A14F TYPICAL CHARACTERISTICS ISSUE 3 - SEPTEMBER 2007 SEMICONDUCTORS 6
PAGE 7
ZXMN2A14F Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.
PAGE 8
ZXMN2A14F PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MIN MAX MIN MAX A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 MILLIMETRES DIM INCHES MIN MAX MIN MAX H 0.33 0.51 0.013 0.020 K 0.01 0.10 0.0004 0.004 C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.