Instruction Manual

ZXMN2A14F
SEMICONDUCTORS
ISSUE 3 - SEPTEMBER 2007
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
20 V I
D
=250␮A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 ␮AV
DS
=20V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=⫾12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.7 V I
D
=250␮A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.060
0.110
⍀
⍀
V
GS
=4.5V, I
D
=3.4A
V
GS
=2.5V, I
D
=2.5A
Forward Transconductance
(1) (3)
g
fs
9.4 S V
DS
=10V,I
D
=3.4A
DYNAMIC
(3)
Input Capacitance C
iss
544 pF
V
DS
=10V,V
GS
=0V,
f=1MHz
Output Capacitance C
oss
132 pF
Reverse Transfer Capacitance C
rss
85 pF
SWITCHING
(2) (3)
Turn-On Delay Time t
d(on)
4.0 ns
V
DD
= 10V, V
GS
=4.5V
I
D
=1A
R
G
≅ 6.0⍀
Rise Time t
r
5.3 ns
Turn-Off Delay Time t
d(off)
16.6 ns
Fall Time t
f
9.5 ns
Total Gate Charge Q
g
6.6 nC
V
DS
=10V,V
GS
=4.5V,
I
D
=3.4A
Gate-Source Charge Q
gs
1.2 nC
Gate-Drain Charge Q
gd
2.1 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85 0.95 V T
J
=25°C, I
S
=(3.3)A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
11.4 ns T
J
=25°C, I
F
=(1.7)A,
di/dt= 100A/␮s
Reverse Recovery Charge
(3)
Q
rr
4.6 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.