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Issue 2 - March 2007 1 www.zetex.com

ZXMN2B01F

20V SOT23 N-channel enhancement mode MOSFET

with low gate drive capability

Summary

Description

This new generation trench MOSFET from Zetex features low on-

resistance achievable with low gate drive.

Features

• Low on-resistance

• Fast switching speed

• Low gate drive capability

• SOT23 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device marking

2B1

(BR)DSS

DS(on)

(⍀)I

(A)

0.100 @ V

= 4.5V 2.4

0.150 @ V

= 2.5V 2.0

0.200 @ V

= 1.8V 1.7

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMN2B01FTA 7 8 3,000

Top view

Summary of content (8 pages)

PAGE 1
ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS(on) (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.
PAGE 2
ZXMN2B01F Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 20 V Gate-source voltage VGS ±8 V ID 2.4 A @ VGS= 4.5V; Tamb=70°C(b) 1.9 A @ VGS= 4.5V; Tamb=25°C(a) 2.1 A IDM 11.8 A IS 1.4 A Pulsed source current (body diode)(c) ISM 11.8 A Power dissipation at Tamb =25°C(a) PD 625 mW 5 mW/°C 806 mW 6.4 mW/°C Tj, Tstg -55 to +150 °C Continuous drain current @ VGS= 4.
PAGE 4
ZXMN2B01F Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. V(BR)DSS 20 Typ. Max. Unit Conditions Static Drain-source breakdown voltage V ID= 250␮A, VGS=0V 1 ␮A VDS= 20V, VGS=0V 100 nA VGS=±8V, VDS=0V 1.0 V ID= 250␮A, VDS=VGS 0.100 ⍀ VGS= 4.5V, ID= 2.4A 0.150 ⍀ VGS= 2.5V, ID= 2.0A 0.200 ⍀ VGS= 1.8V, ID= 1.7A 6.1 S VDS= 10V, ID= 2.
PAGE 6
ZXMN2B01F Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 2 - March 2007 © Zetex Semiconductors plc 2007 Switching time test circuit 6 www.zetex.
PAGE 7
ZXMN2B01F Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 C 0.085 0.120 0.003 0.008 L 0.25 0.62 0.018 0.024 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.0375 NOM Max. Inches 1.90 NOM Max. Max. 0.
PAGE 8
ZXMN2B01F Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.