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Issue 1 - September 2006 1 www.zetex.com

ZXMN2B03E6

20V SOT23-6 N-channel enhancement mode MOSFET

with low gate drive capability

Summary

Description

This new generation trench MOSFET from Zetex features low on-

resistance achievable with low gate drive.

Features

• Low on-resistance

• Fast switching speed

• Low gate drive capability

• SOT23-6 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device marking

2B3

(BR)DSS

DS(on)

(⍀)I

(A)

0.040 @ V

= 4.5V 5.4

0.055 @ V

= 2.5V 4.6

0.075 @ V

= 1.8V 4.0

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMN2B03E6TA 7 8 3,000

Top view

Summary of content (8 pages)

PAGE 1
ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS(on) (⍀) ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 0.075 @ VGS= 1.8V 4.0 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.
PAGE 2
ZXMN2B03E6 Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 20 V Gate-source voltage VGS ±8 V ID 5.4 A Continuous drain current @ VGS= 4.5V; Tamb=25°C(b) @ VGS= 4.5V; Tamb=70°C(b) 4.3 @ VGS= 4.5V; Tamb=25°C(a) 4.3 IDM 26 A IS 2.8 A Pulsed source current (body diode)(c) ISM 26 A Power dissipation at Tamb =25°C(a) PD 1.1 W 8.8 mW/°C 1.7 W 13.
PAGE 4
ZXMN2B03E6 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS 20 V ID= 250␮A, VGS=0V Zero gate voltage drain current IDSS 1 ␮A VDS= 20V, VGS=0V Gate-body leakage IGSS 100 nA VGS=±8V, VDS=0V Gate-source threshold voltage VGS(th) 1.0 V ID= 250␮A, VDS=VGS Static drain-source on-state resistance (*) RDS(on) 0.040 ⍀ VGS= 4.5V, ID= 4.3A 0.055 ⍀ VGS= 2.5V, ID= 3.7A 0.
PAGE 6
ZXMN2B03E6 Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 1 - September 2006 © Zetex Semiconductors plc 2006 Switching time test circuit 6 www.zetex.
PAGE 8
ZXMN2B03E6 Package outline - SOT23-6 DIM Millimeters Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20 1.30 0.10 A A1 A2 b C D E E1 L e e1 L Inches Max. 1.45 0.15 1.30 0.50 0.26 3.10 3.20 1.80 0.60 Min. 0.354 0.00 0.0354 0.0078 0.0035 0.1062 0.0866 0.0511 0.0039 0.95 REF 1.90 REF 0° Max. 0.0570 0.0059 0.0511 0.0196 0.0102 0.1220 0.1181 0.0708 0.0236 0.0374 REF 0.0748 REF 30° 0° 30° Note: Controlling dimensions are in millimeters.