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Issue 2 - March 2007 1 www.zetex.com

ZXMN2B14FH

20V SOT23 N-channel enhancement mode MOSFET

with low gate drive capability

Summary

Description

This new generation of trench MOSFETs from Zetex features low on-

resistance achievable with low gate drive.

Features

• Low on-resistance

• Fast switching speed

• Low gate drive capability

• SOT23 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device marking

2B4

(BR)DSS

DS(on)

(⍀)I

(A)

0.055 @ V

= 4.5V 4.3

0.075 @ V

= 2.5V 3.7

0.100 @ V

= 1.8V 3.2

Device Reel size

(inches)

Tape width

(mm)

Quantity per reel

ZXMN2B14FHTA 7 8 3,000

Top view

Summary of content (8 pages)

PAGE 1
ZXMN2B14FH 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS(on) (⍀) ID (A) 0.055 @ VGS= 4.5V 4.3 0.075 @ VGS= 2.5V 3.7 0.100 @ VGS= 1.8V 3.2 V(BR)DSS 20 Description This new generation of trench MOSFETs from Zetex features low onresistance achievable with low gate drive.
PAGE 2
ZXMN2B14FH Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 20 V Gate-source voltage VGS ±8 V ID 4.3 A Continuous drain current @ VGS= 4.5V; Tamb=25°C (b) @ VGS= 4.5V; Tamb=70°C (b) 3.5 @ VGS= 4.5V; Tamb=25°C (a) 3.5 IDM 21 A IS 2.4 A Pulsed source current (body diode) (c) ISM 21 A Power dissipation at Tamb=25°C (a) PD 1 W 8 mW/°C 1.
PAGE 4
ZXMN2B14FH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-source breakdown voltage V(BR)DSS 20 Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) Typ. Max. Unit Conditions Static 0.4 V ID= 250␮A, VGS=0V 1 ␮A VDS= 20V, VGS=0V 100 nA VGS=±8V, VDS=0V 1.0 V ID= 250␮A, VDS=VGS 0.055 ⍀ VGS= 4.5V, ID= 3.5A 0.075 ⍀ VGS= 2.5V, ID= 3A 0.
PAGE 6
ZXMN2B14FH Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 2 - March 2007 © Zetex Semiconductors plc 2007 Switching time test circuit 6 www.zetex.
PAGE 7
ZXMN2B14FH Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 C 0.085 0.120 0.003 0.008 L 0.25 0.62 0.018 0.024 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.0375 NOM Max. Inches 1.90 NOM Max. Max. 0.
PAGE 8
ZXMN2B14FH Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.