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Issue 1 - January 2008 1 www.zetex.com

ZXMN2F30FH

20V SOT23 N-channel enhancement mode MOSFET

Summary

Description

This new generation Trench MOSFET from Zetex features low on-

resistance achievable with low (2.5V) gate drive.

Features

• Low on-resistance

• 2.5V gate drive capability

• SOT23 package

Applications

• Buck/Boost DC-DC Converters

• Load switching and SMPS

• Charging applications in portable equipment

• Motor Control

• LED Lighting

Ordering information

Device marking

KNC

(BR)DSS

DS(on)

(Ω) I

(A)

20 0.045 @ V

= 4.5V 4.9

0.065 @ V

= 2.5V 4.1

DEVICE Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN2F30FHTA 7 8 3000

Top view

Summary of content (8 pages)

PAGE 1
ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. Features D • Low on-resistance • 2.
PAGE 2
ZXMN2F30FH Absolute maximum ratings Parameter Symbol Limit Unit Drain source voltage VDSS 20 V Gate source voltage VGS ±12 V ID 4.9 4.0 4.1 A A A IDM 22.6 A IS 1.6 A Pulsed source current (body diode)(c) ISM 22.6 A Power dissipation at TA =25°C(a) PD 0.96 W 7.6 mW/°C 1.4 W 11.
PAGE 4
ZXMN2F30FH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-Source Breakdown Voltage V(BR)DSS 20 Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate-Source Threshold Voltage VGS(th) Static Drain-Source On-State Resistance (*) RDS(on) Forward Transconductance(*)(†) gfs Input Capacitance Typ. Max. Unit Conditions Static V ID= 250µA, VGS=0V 1 µA VDS= 20V, VGS=0V 100 nA VGS=±12V, VDS=0V 1.5 V ID= 250µA, VDS=VGS 0.045 0.
PAGE 5
ZXMN2F30FH Typical characteristics VGS=2.5V VGS=4.5V Issue 1 - January 2008 © Zetex Semiconductors plc 2008 5 www.zetex.
PAGE 7
ZXMN2F30FH Package outline - SOT23 E e e1 b 3 leads L1 D E1 A L A1 Dim. c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.
PAGE 8
ZXMN2F30FH Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.