User Manual

ZXMN2F34FH
Issue 2 - February 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source Breakdown
Voltage
V
(BR)DSS
20 V I
D
= 250μA, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
1 μAV
DS
= 20V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±12V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.5 0.8 1.5 V I
D
= 250μA, V
DS
=V
GS
Static Drain-Source
On-State Resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
R
DS(on)
0.060
0.120
Ω
Ω
V
GS
= 4.5V, I
D
= 2.5A
V
GS
= 2.5V, I
D
= 1.0A
Forward
Transconductance
(*)(†)
g
fs
7.5 S V
DS
= 10V, I
D
= 2.5A
Dynamic
(†)
(†) For design aid only, not subject to production testing.
Input Capacitance C
iss
277 pF
V
DS
= 10V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
65 pF
Reverse Transfer
Capacitance
C
rss
35 pF
Switching
(‡)(†)
(‡) Switching characteristics are independent of operating junction temperature.
Tur n-On -Delay Time t
d(on)
2.65 ns
V
DD
= 10V, V
GS
= 4.5V
I
D
= 1A
R
G
≈ 6.0Ω
Rise Time t
r
4.2 ns
Turn-Off Delay Time t
d(off)
9.9 ns
Fall Time t
f
5.1 ns
Total Gate Charge Q
g
2.8 nC V
DS
= 10V, V
GS
= 4.5V
I
D
= 2.5A
Gate-Source Charge Q
gs
0.61 nC
Gate Drain Charge Q
gd
0.63 nC
Source-drain diode
Diode Forward Voltage
(*)
V
SD
0.73 1.2 V I
S
= 1.25A, V
GS
=0V
Reverse recovery time
(†)
t
rr
6.5 ns
T
j
=25
o
C, I
F
=1.65A
di/dt=100A/␮s
Reverse recovery charge
(†)
Q
rr
1.4 nC