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SUMMARY

(BR)DSS

= 30V; R

DS(ON)

= 0.12 I

= 3.0A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure

that combines the benefits of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage, power management

applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

• SOT23-6 package

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

•

3A1

ZXMN3A01E6

ISSUE 2 - JULY 2002

30V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN3A01E6TA 7” 8mm 3000 units

ZXMN3A01E6TC 13” 8mm 10000 units

ORDERING INFORMATION

Top View

PINOUT

Summary of content (7 pages)

PAGE 1
ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN3A01E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage V GS Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) Pulsed Drain Current (c) ID Continuous Source Current (Body Diode) (b) LIMIT 30 UNIT V 20 V 3.0 2.4 2.4 A I DM 10 A IS 2.4 A Pulsed Source Current (Body Diode) (c) I SM 10 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 8.
PAGE 3
ZXMN3A01E6 CHARACTERISTICS 1.2 RDS(on) Limited Max Power Dissipation (W) IC Drain Current (A) 10 1 DC 1s 100ms 100m 10ms 10m Single Pulse 1ms Tamb=25°C 100m 100µs 1 10 VDS Collector-Emitter Voltage (V) 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve 100 Tamb=25°C 100 Maximum Power (W) Thermal Resistance (°C/W) 120 80 60 40 D=0.5 D=0.2 Single Pulse D=0.05 D=0.
PAGE 4
ZXMN3A01E6 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS. STATIC V I D =250µA, V GS =0V 0.5 µA V DS =30V, V GS =0V 100 nA 1 V GS =⫾20V, V DS =0V V I =250µA, V DS = V GS D Static Drain-Source On-State Resistance R DS(on) (1) 0.106 0.12 0.18 Ω Ω V GS =10V, I D =2.
PAGE 5
ZXMN3A01E6 10V T = 25°C 10 7V T = 150°C 5V 4.5V ID Drain Current (A) ID Drain Current (A) TYPICAL CHARACTERISTICS 4V 3.5V 1 3V VGS 0.1 2.5V 0.1 1 5V 1 4V 3.5V 3V 2.5V VGS 0.1 2V 10 0.1 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 10 1.6 VDS = 10V Normalised RDS(on) and VGS(th) ID Drain Current (A) 7V 4.5V VDS Drain-Source Voltage (V) T = 150°C 1 T = 25°C 0.1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS = 10V ID = 2.5A 1.4 RDS(on) 1.2 1.
PAGE 6
ZXMN3A01E6 TYPICAL CHARACTERISTICS 10 VGS = 0V f = 1MHz 250 VGS Gate-Source Voltage (V) C Capacitance (pF) 300 200 CISS 150 COSS CRSS 100 50 0 0.1 1 10 ID = 2.
PAGE 7
ZXMN3A01E6 PACKAGE OUTLINE PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimetres Inches Millimetres DIM Inches DIM Min Max Min Max Min Max Min Max A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118 A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069 A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.002 b 0.35 0.50 0.014 0.019 e 0.95 REF 0.037 REF C 0.09 0.