Owner manual

ZXMN3A01E6
ISSUE 2 - JULY 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
30 V
I
D
=250µA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
0.5
µA
V
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=⫾20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
1V
I
D
=250µA, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.106 0.12
0.18
Ω
Ω
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2.0A
Forward Transconductance (1)(3) g
fs
3.5 S V
DS
=4.5V,I
D
=2.5A
DYNAMIC (3)
Input Capacitance C
iss
190 pF
V
DS
=25V,V
GS
=0V,
f=1MHz
Output Capacitance C
oss
38 pF
Reverse Transfer Capacitance C
rss
20 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
1.7 ns
V
DD
=15V, I
D
=2.5A
R
G
=6.0Ω,V
GS
=10V
Rise Time t
r
2.3 ns
Turn-Off Delay Time t
d(off)
6.6. ns
Fall Time t
f
2.9 ns
Gate Charge Q
g
2.3 nC V
DS
=15V,V
GS
=5V,
I
D
=2.5A
Total Gate Charge Q
g
3.9 nC
V
DS
=15V,V
GS
=10V,
I
D
=2.5A
Gate-Source Charge Q
gs
0.6 nC
Gate-Drain Charge Q
gd
0.9 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.84 0.95 V T
J
=25°C, I
S
=1.7A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
17.7 ns T
J
=25°C, I
F
=2.5A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Q
rr
13.0 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.