User guide

ManualsBrandsDiodes ManualsHardwareZXMN3A03E6

SEMICONDUCTORS

SUMMARY

(BR)DSS

= 30V; R

DS(ON)

= 0.050 I

= 4.6A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure

that combines the benefits of low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage, power management

applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

• SOT23-6 package

APPLICATIONS

•

DC - DC converters

•

Power management functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

•

3A3

ZXMN3A03E6

ISSUE 3 - OCTOBER 2005

30V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN3A03E6TA 7” 8mm 3000 units

ZXMN3A03E6TC 13” 8mm 10000 units

ORDERING INFORMATION

Top View

PINOUT

Summary of content (7 pages)

PAGE 1
ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN3A03E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-source voltage V DSS Gate source voltage V GS Continuous drain current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) Pulsed drain current (c) LIMIT UNIT 30 V 20 V ID 4.6 3.7 3.7 A I DM 17 A IS 2.6 A I SM 17 A (a) PD 1.1 8.8 W mW/°C Power dissipation at T A =25°C (b) Linear derating factor PD 1.7 13.
PAGE 3
ZXMN3A03E6 CHARACTERISTICS ISSUE 3 - OCTOBER 2005 3 SEMICONDUCTORS
PAGE 4
ZXMN3A03E6 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. 30 TYP. MAX. UNIT CONDITIONS. STATIC Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate-body leakage I GSS Gate-source threshold voltage V GS(th) Static drain-source on-state resistance Forward transconductance (1)(3) (1) V I D =250␮A, V GS =0V 0.5 ␮A V DS =30V, V GS =0V 100 nA V GS =⫾20V, V DS =0V V I =250␮A, V DS = V GS D ⍀ ⍀ V GS =10V, I D =7.
PAGE 5
ZXMN3A03E6 TYPICAL CHARACTERISTICS ISSUE 3 - OCTOBER 2005 5 SEMICONDUCTORS
PAGE 6
ZXMN3A03E6 TYPICAL CHARACTERISTICS ISSUE 3 - OCTOBER 2005 SEMICONDUCTORS 6
PAGE 7
ZXMN3A03E6 PACKAGE OUTLINE PAD LAYOUT DETAILS CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118 A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069 A2 0.90 1.30 b 0.35 0.50 0.035 0.051 L 0.10 0.60 0.004 0.002 0.014 0.019 e 0.95 REF 0.037 REF C 0.09 0.20 0.0035 0.008 e1 1.90 REF 0.074 REF D 2.