User guide

ZXMN3A03E6
SEMICONDUCTORS
ISSUE 3 - OCTOBER 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-source breakdown voltage V
(BR)DSS
30 V I
D
=250␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
0.5 ␮AV
DS
=30V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=⫾20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1VI
D
=250␮A, V
DS
=V
GS
Static drain-source on-state resistance
(1)
R
DS(on)
0.050
0.065
⍀
⍀
V
GS
=10V, I
D
=7.8A
V
GS
=4.5V, I
D
=6.8A
Forward transconductance
(1)(3)
g
fs
10 S V
DS
=10V,I
D
=7.8A
DYNAMIC
(3)
Input capacitance C
iss
600 pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
Output capacitance C
oss
104 pF
Reverse transfer capacitance C
rss
58.5 pF
SWITCHING
(2) (3)
Turn-on delay time t
d(on)
2.9 ns
V
DD
=15V, I
D
=3.5A
R
G
=6.0⍀,V
GS
=10V
Rise time t
r
6.4 ns
Turn-off delay time t
d(off)
16.0 ns
Fall time t
f
11.2 ns
Gate charge Q
g
6.9 nC V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total gate charge Q
g
12.6 nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-source charge Q
gs
2.0 nC
Gate-drain charge Q
gd
2.0 nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
0.85 0.95 V T
J
=25°C, I
S
=3.2A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
18.8 ns T
J
=25°C, I
F
=3.5A,
di/dt= 100A/µs
Reverse recovery charge
(3)
Q
rr
14.1 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.