Manual

ManualsBrandsDiodes ManualsHardwareZXMN3A04DN8

SUMMARY

(BR)DSS

= 30V; R

DS(ON)

= 0.02 ;I

= 8.5A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast switching

speed. This makes them ideal for high efficiency, low voltage, power

management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

ZXMN

3A04D

ZXMN3A04DN8

ISSUE 2 - OCTOBER 2002

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

DEVICE REEL TAPE

WIDTH

QUANTITY

PER REEL

ZXMN3A04DN8TA 7

’‘ 12mm 500 units

ZXMN3A04DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

SO8

Top view

PINOUT

Summary of content (7 pages)

PAGE 1
ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 30V; RDS(ON)= 0.02 ; ID= 8.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN3A04DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage LIMIT UNIT 30 V V GS ⫾20 V Continuous Drain Current (V GS =10V; T A =25°C)(b)(d) (V GS =10V; T A =70°C)(b)(d) (V GS =10V; T A =25°C)(a)(d) ID 8.5 6.8 6.5 A Pulsed Drain Current (c) I DM 39 A Continuous Source Current (Body Diode) (b) IS 3.6 A Pulsed Source Current (Body Diode)(c) I SM 39 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 1.
PAGE 3
ZXMN3A04DN8 CHARACTERISTICS ISSUE 2 - OCTOBER 2002 3
PAGE 4
ZXMN3A04DN8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. V (BR)DSS 30 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs Input Capacitance V I D =250µA, V GS =0V 0.
PAGE 5
ZXMN3A04DN8 TYPICAL CHARACTERISTICS ISSUE 2 - OCTOBER 2002 5
PAGE 6
ZXMN3A04DN8 TYPICAL CHARACTERISTICS ISSUE 2 - OCTOBER 2002 6
PAGE 7
ZXMN3A04DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES MILLIMETRES DIM MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.