Instruction Manual

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ZXMN3AMC

Document number: DS35087 Rev. 1 - 2

1 of 8

www.diodes.com

December 2010

ZXMN3

Product Line o

Diodes Incorporated

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

max

= 25°C

(Notes 4 & 7)

30V

120mΩ @ V

= 10V

3.7A

180mΩ @ V

= 4.5V

3.0A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• DC-DC Converters

• Power management functions

• Disconnect switches

• Portable applications

Features and Benefits

• Low profile package, for thin applications

• Low R

θJA

, thermally efficient package

• 6mm

footprint, 50% smaller than TSOP6 and SOT23-6

• Low on-resistance

• Fast switching speed

• “Lead-Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: DFN3020B-8

• Terminals: Pre-Plated NiPdAu leadframe

• Nominal package height: 0.8mm

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Solderable per MIL-STD-202, Method 208

• Weight: 0.013 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN3AMCTA DNB 7 8 3000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Equivalent Circuit

Bottom View

Pin-Out

D2 D2 D1 D1

G2 S2 G1 S1

Pin 1

Top View

Bottom View

DFN3020B-8

DNB = Product Type Marking Code

Top View, Dot Denotes Pin 1

DNB

Summary of content (8 pages)

PAGE 1
A Product Line of Diodes Incorporated ZXMN3AMC 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS(on) max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS = 10V 3.7A 180mΩ @ VGS = 4.5V 3.0A 30V Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
PAGE 2
A Product Line of Diodes Incorporated ZXMN3AMC Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body diode) Pulse Source Current (Body diode) Thermal Characteristics (Notes 4 & 7) TA = 70°C (Notes 4 & 7) (Notes 3 & 7) (Notes 6 & 7) (Notes 4 & 7) (Notes 6 & 7) ID IDM IS ISM Unit Value 1.50 12 2.45 19.6 1.13 9 1.70 13.6 83.3 51.
PAGE 3
A Product Line of Diodes Incorporated ZXMN3AMC RDS(on) Limited 10 ID Drain Current (A) Max Power Dissipation (W) Thermal Characteristics 1 DC 1s 100ms 100m 10m 10ms 8 sq cm 2oz Cu One active die Single Pulse, Tamb=25°C 1ms 100us 1 10 2.0 10 sq cm 1oz Cu Two active die 1.5 8 sq cm 2oz Cu One active die 10 sq cm 1oz Cu One active die 1.0 0.5 0.
PAGE 4
A Product Line of Diodes Incorporated ZXMN3AMC Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 0.5 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 RDS(ON) - gfs VSD trr Qrr - 3.0 0.120 0.180 0.
PAGE 5
A Product Line of Diodes Incorporated ZXMN3AMC Typical Electrical Characteristics 10V 7V T = 150°C 5V 4.5V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 4V 3.5V 1 3V VGS 0.1 2.5V 0.1 1 10 5V 4.5V 4V 3.5V 3V 2.5V VGS 0.1 2V 10 0.1 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 VDS = 10V T = 150°C 1 T = 25°C 0.1 2.0 2.5 3.0 3.5 4.0 4.5 5.
PAGE 6
A Product Line of Diodes Incorporated ZXMN3AMC Typical Electrical Characteristics - Continued 10 VGS = 0V 250 f = 1MHz 200 CISS 150 COSS CRSS 100 50 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) C Capacitance (pF) 300 ID = 2.5A 8 6 VDS = 15V 4 2 0 0 1 2 3 4 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.
PAGE 7
A Product Line of Diodes Incorporated ZXMN3AMC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 Z b e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXMN3AMC Document number: DS35087 Rev. 1 - 2 Dimensions C G G1 X X1 Y Y1 Y2 7 of 8 www.diodes.com Value (in mm) 0.
PAGE 8
A Product Line of Diodes Incorporated ZXMN3AMC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).