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SUMMARY

(BR)DSS

=30V : R

DS(on)

=0.15 ; I

=2A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that

combines the benefits of low on-resistance with fast switching speed. This makes

them ideal for high efficiency, low voltage, power management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23 package

APPLICATIONS

•

DC-DC Converters

•

Power Management functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

•

3B1

ZXMN3B01F

ISSUE 1 - DECEMBER 2005

30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN3B01FTA 7” 8mm 3000 units

ZXMN3B01FTC 13” 8mm 10000 units

ORDERING INFORMATION

PINOUT

TOP VIEW

Summary of content (7 pages)

PAGE 1
ZXMN3B01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.15 ; ID=2A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN3B01F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GS ⫾12 V Continuous Drain Current @ V GS =4.5V; T A =25°C (b) @ V GS =4.5V; T A =70°C (b) @ V GS =4.5V; T A =25°C (a) ID 2.0 A 1.6 A 1.7 A (c) I DM 9.4 A Continuous Source Current (Body Diode) (b) IS 1.3 A Pulsed Source Current (Body Diode) (c) I SM 9.
PAGE 3
ZXMN3B01F TYPICAL CHARACTERISTICS ISSUE 1 - DECEMBER 2005 3 SEMICONDUCTORS
PAGE 4
ZXMN3B01F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. 30 TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS V I D =250␮A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 ␮A V DS =30V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =⫾12V, V DS =0V Gate-Source Threshold Voltage V GS(th) V Static Drain-Source On-State R DS(on) I =250␮A, V DS = V GS D V GS =4.5V, I D =1.7A 0.
PAGE 5
ZXMN3B01F CHARACTERISTICS ISSUE 1 - DECEMBER 2005 5 SEMICONDUCTORS
PAGE 6
ZXMN3B01F TYPICAL CHARACTERISTICS Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.
PAGE 7
ZXMN3B01F PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETERS DIM INCHES MIN MAX MIN MAX A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 MILLIMETERS DIM INCHES MIN MAX MIN MAX H 0.33 0.51 0.013 0.020 K 0.01 0.10 0.0004 0.004 C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.