Owner's manual

ZXMN3B01F
SEMICONDUCTORS
ISSUE 1 - DECEMBER 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
(a)
R
⍜JA
200 °C/W
Junction to Ambient
(b)
R
⍜JA
155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GS
⫾12 V
Continuous Drain Current
@V
GS
=4.5V; T
A
=25°C
(b)
@V
GS
=4.5V; T
A
=70°C
(b)
@V
GS
=4.5V; T
A
=25°C
(a)
I
D
2.0
1.6
1.7
A
A
A
Pulsed Drain Current
(c)
I
DM
9.4 A
Continuous Source Current (Body Diode)
(b)
I
S
1.3 A
Pulsed Source Current (Body Diode)
(c)
I
SM
9.4 A
Power Dissipation at T
A
=25°C
(a)
Linear Derating Factor
P
D
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range T
j
,T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS