Manual

ManualsBrandsDiodes ManualsHardwareZXMN3B14F

SEMICONDUCTORS

SUMMARY

(BR)DSS

=30V : R

(

)=0.08 ; I

=3.5A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that

combines the benefits of low on-resistance with fast switching speed. This makes

them ideal for high efficiency, low voltage, power management applications.

FEATURES

•

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23 package

APPLICATIONS

•

DC-DC converters

•

Power management functions

•

Disconnect switches

•

Motor control

DEVICE MARKING

•

3B4

ZXMN3B14F

ISSUE 2 - JANUARY 2006

30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

DEVICE REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMN3B14FTA 7” 8mm 3,000 units

ZXMN3B14FTC 13” 8mm 10,000 units

ORDERING INFORMATION

PINOUT

Summary of content (7 pages)

PAGE 1
ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN3B14F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate-Source Voltage V GS ⫾12 V Continuous Drain Current @ V GS = 4.5V; T A =25°C (b) @ V GS = 4.5V; T A =70°C (b) @ V GS = 4.5V; T A =25°C (a) ID 3.5 2.9 2.9 A A A Pulsed Drain Current (c) I DM 16 A Continuous Source Current (Body Diode) (b) IS 2.
PAGE 3
ZXMN3B14F TYPICAL CHARACTERISTICS ISSUE 2 - JANUARY 2006 3 SEMICONDUCTORS
PAGE 4
ZXMN3B14F ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. 30 TYP. MAX. UNIT CONDITIONS STATIC V I D = 250␮A, V GS =0V Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS 1 ␮A V DS = 30V, V GS =0V Gate-Body Leakage I GSS 100 nA Gate-Source Threshold Voltage V GS(th) V GS =⫾12V, V DS =0V I D = 250␮A, V DS =V GS Static Drain-Source On-State R DS(on) 0.080 ⍀ 0.140 0.7 V ⍀ V GS = 4.5V, I D = 3.1A V GS = 2.
PAGE 5
ZXMN3B14F N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JANUARY 2006 5 SEMICONDUCTORS
PAGE 6
ZXMN3B14F N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JANUARY 2006 SEMICONDUCTORS 6
PAGE 7
ZXMN3B14F PACKAGE OUTLINE PAD LAYOUT Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MIN MAX MIN MAX A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 MILLIMETRES DIM INCHES MIN MAX MIN MAX H 0.33 0.51 0.013 0.020 K 0.01 0.10 0.0004 0.004 C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.