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Issue 1 - March 2006 1 www.zetex.com

ZXMN4A06K

40V N-channel enhancement mode MOSFET

Summary

(BR)DSS

= -40V; R

DS(ON)

= 0.05; I

= 10.9A

Description

This new generation of trench MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast

switching speed. This makes them ideal for high efficiency, low voltage,

power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• DPAK package

Applications

•DC - DC converters

• Audio output stages

• Relay and solenoid driving

• Motor control

Ordering information

Device marking

ZXMN

4A06

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN4A06KTC 13 16 2,500

Pinout - Top view

Summary of content (8 pages)

PAGE 1
ZXMN4A06K 40V N-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON) = 0.05 ; ID = 10.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
PAGE 2
ZXMN4A06K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 40 V Gate-source voltage VGS 20 V 10.9 A 8.7 A 7.2 A Continuous drain current: VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) ID VGS=10V; TA=25°C (a) Pulsed drain current (c) IDM 35.3 A Continuous source current (body diode) IS 10.8 A Pulsed source current (body diode) (c) ISM 35.3 A Power dissipation at TA=25°C (a) Linear derating factor PD 4.2 33.
PAGE 4
ZXMN4A06K Electrical characteristics (at TA = 25°C unless otherwise stated) Parameter Symbol Min. V(BR)DSS 40 Typ. Max. Unit Conditions Static Drain-source breakdown voltage Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) V ID=250 A, VGS=0V 1 A VDS=40V, VGS=0V 100 nA VGS=±20V, VDS=0V 1.0 V ID=250 A, VDS= VGS 0.050 VGS=10V, ID=4.5A 0.075 VGS=4.5V, ID=3.2A VDS=15V,ID=4.
PAGE 6
ZXMN4A06K Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 1 - March 2006 © Zetex Semiconductors plc 2005 Switching time test circuit 6 www.zetex.
PAGE 8
ZXMN4A06K Package details - DPAK Package dimensions Dim. A A1 b b2 b3 c c2 D D1 E E1 Inches Min. Max. 0.086 0.094 0.005 0.020 0.035 0.030 0.045 0.205 0.215 0.018 0.024 0.018 0.023 0.213 0.245 0.205 0.250 0.265 0.170 - Millimeters Min. Max. 2.18 2.39 0.127 0.508 0.89 0.762 1.14 5.21 5.46 0.457 0.61 0.457 0.584 5.41 6.22 5.21 6.35 6.73 4.32 - Dim. e H L L1 L2 L3 L4 L5 1° ° - Inches Min. Max. 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.065 0.025 0.040 0.045 0.