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ZXMN6A08K

Document Revision: 2

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www.diodes.com

July 2009

Product Line o

Diodes Incorporated

ZXMN6A08K

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

= 25°C

60V

80mΩ @ V

= 10V

7.90A

150mΩ @ V

= 4.5V

5.75A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• Backlighting

• DC-DC Converters

• Power management functions

Features and Benefits

• Low on-resistance

• Fast switching speed

• “Green” component and RoHS compliant (Note 1)

Mechanical Data

• Case: TO-252

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals Connections: See Diagram

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN6A08KTC See Below 13 16 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information

about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

TOP VIEW PIN OUT -TOP VIEW

Equivalent Circuit

ZXMN = Product Type Marking Code, Line 1

6A08 = Product Type Marking Code, Line 2

YYWW = Date Code Marking

YY = Year (ex: 09 = 2009)

WW = Week

(

01-52

)

YYWW

ZXMN

6A08

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Summary of content (8 pages)

PAGE 1
A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits RDS(on) ID TA = 25°C 80mΩ @ VGS= 10V 7.90A 150mΩ @ VGS= 4.5V 5.
PAGE 2
A Product Line of Diodes Incorporated ZXMN6A08K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA=70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 60 ±20 7.90 6.30 5.36 24.3 9.0 24.3 Unit V V Value 4.13 33.0 8.94 71.5 2.12 16.9 30.3 14.0 59.1 2.
PAGE 3
A Product Line of Diodes Incorporated ZXMN6A08K Thermal Characteristics RDS(on) ID Drain Current (A) ID Drain Current (A) RDS(on) 10 Limit 1 DC 1s 100ms 100m 10m 1ms 25mm x 25mm 1oz FR4 100µs 1 1 DC 100ms 10ms T amb=25°C 10m 10 100µs 1 10 VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area 35 T amb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 D=0.1 D=0.2 D=0.
PAGE 4
A Product Line of Diodes Incorporated ZXMN6A08K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 60V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage VGS= 10V, ID= 4.
PAGE 5
A Product Line of Diodes Incorporated ZXMN6A08K Typical Characteristics 10V T = 25°C 5V 10 4.5V 4V 3.5V 1 3V VGS 0.1 0.1 1 ID Drain Current (A) ID Drain Current (A) 10 1 2.5V 2V 0.1 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 Normalised RDS(on) and VGS(th) ID Drain Current (A) 1 T = 25°C 0.1 VDS = 10V 0.01 5 VGS Gate-Source Voltage (V) VGS 5V 7V 10V 0.
PAGE 6
A Product Line of Diodes Incorporated ZXMN6A08K Typical Characteristics - continued VGS Gate-Source Voltage (V) C Capacitance (pF) 10 600 VGS = 0V 400 f = 1MHz CISS COSS CRSS 200 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage ID = 1.4A 8 6 VDS = 15V 4 2 0 0 1 2 3 4 5 6 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.
PAGE 7
A Product Line of Diodes Incorporated ZXMN6A08K Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Max Min Max A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.
PAGE 8
A Product Line of Diodes Incorporated ZXMN6A08K Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).