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Issue 6 - January 2007 1 www.zetex.com

ZXMN6A09DN8

60V SO8 N-channel enhancement mode MOSFET

Summary

Description

This new generation of trench MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast

switching speed. This makes them ideal for high efficiency, low voltage

power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOIC package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device marking

ZXMN

6A09D

(BR)DSS

DS(on)

() I

(A)

0.040 @ V

= 10V 5.6

0.060 @ V

= 4.5V 4.6

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN6A09DN8TA 7 12 500

D1S1

Top view

Summary of content (8 pages)

PAGE 1
ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 5.6 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.
PAGE 2
ZXMN6A09DN8 Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 60 V Gate-source voltage VGS ±20 V ID 5.6 A Continuous drain current @ VGS=10V; Tamb=25°C(b) @ VGS=10V; Tamb=70°C(b) 4.5 @ VGS=10V; Tamb=25°C(a) 4.3 IDM 27 A IS 3.5 A Pulsed source current (body diode)(c) ISM 27 A Power dissipation at Tamb = 25°C(a)(d) PD 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.
PAGE 4
ZXMN6A09DN8 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS 60 V ID= 250 A, VGS=0V Zero gate voltage drain current IDSS 1 A VDS= 60V, VGS=0V Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-source threshold voltage VGS(th) 3.0 V ID= 250 A, VDS=VGS Static drain-source on-state resistance (*) RDS(on) 0.040 VGS= 10V, ID= 8.2A 0.060 VGS= 4.5V, ID = 7.
PAGE 6
ZXMN6A09DN8 Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 6 - January 2007 © Zetex Semiconductors plc 2007 Switching time test circuit 6 www.zetex.
PAGE 7
ZXMN6A09DN8 Package outline - SO8 DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Note: Controlling dimensions are in inches.
PAGE 8
ZXMN6A09DN8 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.