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Issue 3 - September 2006 1 www.zetex.com

ZXMN6A11DN8

60V SO8 Dual N-channel enhancement mode MOSFET

Summary

Description

This new generation trench MOSFET from Zetex features a unique

structure combining the benefits of low on-resistance and fast

switching, making it ideal for high efficiency power management

applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

Applications

• DC-DC converters

• Power management functions

• Motor control

Ordering information

Device marking

ZXMN

6A11D

(BR)DSS

DS(on)

(⍀) I

(A)

0.120 @ V

= 10V 3.2

0.180 @ V

= 4.5V 2.6

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN6A11DN8TA 7 12 500

D1S1

Pin out - top view

Summary of content (8 pages)

PAGE 1
ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 V(BR)DSS 60 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.
PAGE 2
ZXMN6A11DN8 Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 60 V Gate-source voltage VGS ±20 V ID 3.2 A Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) 2.6 @ VGS= 10V; Tamb=25°C(a) 2.5 IDM 13.7 A IS 3.1 A Pulsed source current (body diode)(c) ISM 13.7 A Power dissipation at Tamb =25°C(a)(d) PD 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.
PAGE 4
ZXMN6A11DN8 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS 60 V ID= 250␮A, VGS=0V Zero gate voltage drain current IDSS 1.0 ␮A VDS= 60V, VGS=0V Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) Forward transconductance(*)(‡) gfs Input capacitance 1.0 V ID= 250␮A, VDS=VGS 0.
PAGE 6
ZXMN6A11DN8 Typical characteristics Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms Issue 3 - September 2006 © Zetex Semiconductors plc 2006 Switching time test circuit 6 www.zetex.
PAGE 8
ZXMN6A11DN8 Package outline - SO8 DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 ⍜ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Note: Controlling dimensions are in inches.