Owner's manual

ZXMN6A11DN8
Issue 3 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
60 V I
D
= 250␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1.0 ␮AV
DS
= 60V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 V I
D
= 250␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle ⱕ2%.
R
DS(on)
0.120 ⍀ V
GS
= 10V, I
D
= 2.5A
0.180 ⍀ V
GS
= 4.5V, I
D
= 2A
Forward transconductance
(*)(‡)
g
fs
4.9 S V
DS
= 15V, I
D
= 2.5A
Dynamic
(‡)
Input capacitance C
iss
330 pF V
DS
= 40V, V
GS
=0V
f=1MHz
Output capacitance C
oss
35.2 pF
Reverse transfer capacitance C
rss
17.1 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
1.95 ns V
DD
= 30V, I
D
= 2.5A
R
G
≅
6.0⍀, V
GS
= 10V
Rise time t
r
3.5 ns
Turn-off delay time t
d(off)
8.2 ns
Fall time t
f
4.6 ns
Gate charge Q
g
3.0 nC V
DS
= 15V, V
GS
= 5V
I
D
= 2.5A
Total gate charge Q
g
5.7 nC V
DS
= 15V, V
GS
= 10V
I
D
= 2.5A
Gate-source charge Q
gs
1.25 nC
Gate drain charge Q
gd
0.86 nC
Source-drain diode
Diode forward voltage
(*)
V
SD
0.85 0.95 V T
j
=25°C, I
S
= 2.8A,
V
GS
=0V
Reverse recovery time
(‡)
t
rr
21.5 ns T
j
=25°C, I
S
= 2.5A,
di/dt=100A/␮s
Reverse recovery charge
(‡)
Q
rr
20.5 nC