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ZXMN6A11G

Document number: DS33556 Rev. 5 - 2

1 of 8

www.diodes.com

October 2010

ZXMN6A11G

Product Line o

Diodes Incorporated

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

= 25°C

60V

120m @ V

= 10V

4.4A

180m @ V

= 4.5V

3.5A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor Control

• Uninterrupted power supply

Features and Benefits

• Fast switching speed

• Low gate drive

• Low input capacitance

• “Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZXMN6A11GTA See below 7 12 1,000

Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information

about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

6A11

ZXMN

ZXMN = Product Type Marking Code, Line 1

6A11 = Product Type Marking Code, Line 2

Equivalent Circuit

Pin Out - Top

Top View

SOT223

Summary of content (8 pages)

PAGE 1
A Product Line of Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • ID V(BR)DSS RDS(on) TA = 25°C 120mΩ @ VGS= 10V 4.4A 180mΩ @ VGS= 4.5V 3.
PAGE 2
A Product Line of Diodes Incorporated ZXMN6A11G Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) Value 60 ±20 Units V 4.4 ID 3.5 3.1 IDM IS ISM 15.6 5 15.6 A Symbol Value 2.0 16 3.9 31 62.5 32.0 9.
PAGE 3
A Product Line of Diodes Incorporated ZXMN6A11G Thermal Characteristics RDS(on) 2.00 Max Power Dissipation (W) ID Drain Current (A) 10 Limited 1.50 1 1.25 DC 1.00 1s 100m 100ms T amb=25°C 10m 25mm x 25mm 1oz FR4 1.75 0.75 10ms 25mm x 25mm 1oz FR4 0.50 1ms 100µs 1 0.25 0.00 10 VDS Drain-Source Voltage (V) 0 20 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 D=0.
PAGE 4
A Product Line of Diodes Incorporated ZXMN6A11G Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) gfs VSD trr Qrr ⎯ 0.105 0.150 4.9 0.85 21.5 20.5 3.0 0.120 0.180 ⎯ 0.
PAGE 5
A Product Line of Diodes Incorporated ZXMN6A11G Typical Characteristics T = 150°C 10V 5V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 4V 3.5V 1 3V VGS 0.1 2.5V 0.1 1 2.5V 4 5 VGS Gate-Source Voltage (V) Normalised RDS(on) and VGS(th) ID Drain Current (A) 0.1 1.8 5V 10V 0.1 T = 25°C 10 On-Resistance v Drain Current Document number: DS33556 Rev. 5 - 2 RDS(on) 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 0.
PAGE 6
A Product Line of Diodes Incorporated ZXMN6A11G 500 C Capacitance (pF) VGS = 0V 400 f = 1MHz 300 CISS COSS 200 CRSS 100 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) Typical Characteristics - continued 10 ID = 2.5A 8 6 VDS = 30V 4 2 0 0 1 2 3 4 5 Q - Charge (nC) 6 Gate-Source Voltage v Gate Charge Test Circuit Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.
PAGE 7
A Product Line of Diodes Incorporated ZXMN6A11G Package Outline Dimensions DIM A A1 A2 b b2 C Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33 Inches Min 0.0008 0.0610 0.026 0.114 0.009 Max 0.071 0.004 0.0649 0.033 0.122 0.013 DIM D e e1 E E1 L Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.
PAGE 8
A Product Line of Diodes Incorporated ZXMN6A11G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).