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Issue 1 - October 2006 1 www.zetex.com

ZXMP10A16K

100V DPAK P-channel enhancement mode MOSFET

Summary

Description

This new generation trench MOSFET from Zetex features a unique

structure combining the benefits of low on-resistance and fast

switching, making it ideal for high efficiency power management

applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• DPAK package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device marking

ZXMP

10A16

(BR)DSS

DS(on)

(⍀) I

(A)

-100

0.235 @ V

= -10V 4.6

0.285 @ V

= -6V 4.2

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMP10A16KTC 13 16 2500

Pinout - top view

Summary of content (8 pages)

PAGE 1
ZXMP10A16K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS -100 RDS(on) (⍀) ID (A) 0.235 @ VGS= -10V 4.6 0.285 @ VGS= -6V 4.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.
PAGE 2
ZXMP10A16K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS -100 V Gate-source voltage VGS ±20 V ID 4.6 A Continuous drain current @ VGS= 10V; Tamb=25°C(b) @ VGS= 10V; Tamb=70°C(b) 3.7 @ VGS= 10V; Tamb=25°C(a) 3 IDM 15.4 A IS 10.6 A Pulsed source current (body diode)(c) ISM 15.4 A Power dissipation at Tamb =25°C(a) PD 4.24 W 34 mW/°C 9.76 W 78 mW/°C 2.15 W 16.
PAGE 4
ZXMP10A16K Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. V(BR)DSS -100 Typ. Max. Unit Conditions Static Drain-source breakdown voltage Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) -2.0 V ID= 250␮A, VGS=0V -1 ␮A VDS= -100V, VGS=0V 100 nA VGS=±20V, VDS=0V -4.0 V ID= -250␮A, VDS=VGS 0.235 W VGS= -10V, ID= -2.1A VGS= -6V, ID= -1.9A 0.
PAGE 6
ZXMP10A16K Typical characteristics Current regulator QG 12V VG QGS 50k 0.2␮F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms Issue 1 - October 2006 © Zetex Semiconductors plc 2006 Pulse width ⬍ 1␮S Duty factor 0.1% td(on) Switching time test circuit 6 www.zetex.
PAGE 8
ZXMP10A16K Package details - DPAK DIM A A1 b b2 b3 c c2 D D1 E E1 Inches Min Max 0.086 0.094 0.005 0.020 0.035 0.030 0.045 0.205 0.215 0.018 0.024 0.018 0.023 0.213 0.245 0.205 0.250 0.265 0.170 - Millimeters Min Max 2.18 2.39 0.127 0.508 0.89 0.762 1.14 5.21 5.46 0.457 0.61 0.457 0.584 5.41 6.22 5.21 6.35 6.73 4.32 - DIM e H L L1 L2 L3 L4 L5 θ1° θ° - Inches Min Max 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.065 0.025 0.040 0.045 0.060 0° 10° 0° 15° - Millimeters Min Max 2.29 BSC 9.