Manual

ZXMP10A16K
Issue 1 - October 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage
V
(BR)DSS
-100 V I
D
= 250␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
-1 ␮AV
DS
= -100V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-2.0 -4.0 V I
D
= -250␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
R
DS(on)
0.235 W V
GS
= -10V, I
D
= -2.1A
0.285 V
GS
= -6V, I
D
= -1.9A
Forward transconductance
(*) (‡)
g
fs
4.7 S V
DS
= -15V, I
D
= -2.1A
Dynamic
(‡)
Input capacitance C
iss
717 pF V
DS
= -50V, V
GS
=0V
f=1MHz
Output capacitance C
oss
55.3 pF
Reverse transfer capacitance C
rss
46.4 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
4.3 ns V
DD
= -50V, I
D
= -1A
R
G
=6.0⍀, V
GS
= -10V
Rise time t
r
5.2 ns
Turn-off delay time t
d(off)
20 ns
Fall time t
f
12.1 ns
Total gate charge Q
g
16.5 nC V
DS
= -50V, V
GS
= -10V
I
D
= -2.1A
Gate-source charge Q
gs
2.47 nC
Gate drain charge Q
gd
5.36 nC
Source-drain diode
Diode forward voltage
(*)
V
SD
-0.85 -0.95 V T
j
=25°C, I
S
= -3.35A,
V
GS
=0V
Reverse recovery time
(‡)
t
rr
43.3 ns T
j
=25°C, I
S
= -2.4A,
di/dt=100A/␮s
Reverse recovery charge
(‡)
Q
rr
76.5 nC