User Manual

ZXMP10A17E6
Document Number DS32027 Rev. 6 - 2
2 of 7
www.diodes.com
January 2014
© Diodes Incorporated
ZXMP10
A
17E6
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Drain-Source Voltage
V
DSS
-100 V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
V
GS
= 10V
(Note 6)
I
D
-1.6
A
T
A
= +70°C (Note 6)
-1.3
(Note 5) -1.3
Pulsed Drain Current
V
GS
= 10V
(Note 7)
I
DM
-7.7 A
Continuous Source Current (Body diode) (Note 6)
I
S
-2.1 A
Pulsed Source Current (Body diode) (Note 7)
I
SM
-7.7 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Power dissipation
Linear derating factor
(Note 5)
P
D
1.1
8.8
W
mW/°C
(Note 6)
1.7
13.7
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
113
°C/W
(Note 6) 73
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-100
⎯ ⎯
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-0.5 µA
V
DS
= -100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-2
⎯
-4 V
I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS(ON)
⎯ ⎯
0.35
Ω
V
GS
= -10V, I
D
= -1.4A
0.45
V
GS
= -6V, I
D
= -1.2A
Forward Transconductance (Notes 8 & 9)
g
fs
⎯
2.8
⎯
S
V
DS
= -15V, I
D
= -1.4A
Diode Forward Voltage (Note 8)
V
SD
⎯
-0.85 -0.95 V
I
S
= -1.7A, V
GS
= 0V
Reverse recovery time (Note 9)
t
rr
33
⎯
ns
I
S
= -1.5A, di/dt = 100A/µs
Reverse recovery charge (Note 9)
Q
rr
⎯
48
⎯
nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
424
⎯
pF
V
DS
= -50V, V
GS
= 0V
F = 1MHz
Output Capacitance
C
oss
⎯
36.6
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
29.8
⎯
pF
Total Gate Charge (Note 10)
Q
g
⎯
7.1
⎯
nC
V
GS
= -6V
V
DS
= -50V
I
D
= -1.4A
Total Gate Charge (Note 10)
Q
g
⎯
10.7
⎯
nC
V
GS
= -10V
Gate-Source Charge (Note 10)
Q
gs
⎯
1.7
⎯
nC
Gate-Drain Charge (Note 10)
Q
gd
⎯
3.8
⎯
nC
Turn-On Delay Time (Note 10)
t
D(on)
⎯
3
⎯
ns
V
DD
= -50V, V
GS
= -10V
I
D
= -1A, R
G
≅ 6Ω
Turn-On Rise Time (Note 10)
t
r
⎯
3.5
⎯
ns
Turn-Off Delay Time (Note 10)
t
D(off)
⎯
13.4
⎯
ns
Turn-Off Fall Time (Note 10)
t
f
⎯
7.2
⎯
ns
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t ≤ 5 sec.
7. Same as note (5), except the device is pulsed with D = 0.05 and pulse width 10µs. The pulse current is limited by the maximum junction temperature.
8. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.