Instruction Manual

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ZXMP6A13FQ

Document Number DS36684 Rev. 2 - 2

1 of 8

www.diodes.com

December 2013

ZXMP6A13FQ

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

Max R

DS(on)

Max I

= +25°C

-60V

400mΩ @ V

= -10V

-1.1A

600mΩ @ V

= -4.5V

-0.9A

Description

This MOSFET utilizes a unique structure that combines the benefits

of low on-resistance with fast switching speed, making it ideal for

high-efficiency power management applications.

Applications

 DC - DC converters

 Power management functions

 Relay and solenoid driving

 Motor control

Features

 Fast switching speed

 Low input capacitance

 Low gate charge

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Available

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Ordering Information (Notes 4 & 5)

Product Compliance Case Quantity per reel

ZXMP6A13FQTA

Automotive SOT23 3,000 Units

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Top View

Equivalent Circuit

7P6 = Product Type Marking Code

Top View

Pin Out

7P6

SOT23

Summary of content (8 pages)

PAGE 1
ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description        This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. Mechanical Data V(BR)DSS Max RDS(on) -60V 400mΩ @ VGS = -10V 600mΩ @ VGS = -4.5V Max ID TA = +25°C -1.1A -0.
PAGE 2
ZXMP6A13FQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V TA = +70°C Pulsed Drain Current (Note 8) Continuous Source Current (Body Diode) (Note 7) Pulsed Source Current (Body Diode) (Note 8) (Note 7) (Note 7) (Note 6) ID IDM IS ISM Value -60 ±20 -1.1 -0.8 -0.9 -4.0 -1.2 -4.0 Units V V Value 625 5 806 6.
PAGE 3
ZXMP6A13FQ Thermal Characteristics 10 -ID Drain Current (A) Limited 1 DC 1s 100m 100ms 10ms 10m Single Pulse Tamb=25°C 1 1ms 100µs 10 -VDS Drain-Source Voltage (V) 100 Max Power Dissipation (W) 0.7 RDS(on) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 200 T amb=25°C 150 D=0.5 100 50 Single Pulse D=0.2 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 Pulse Width (s) 10 Document Number DS36684 Rev.
PAGE 4
ZXMP6A13FQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60       -0.5 ±100 V μA nA ID = -250μA, VGS = 0V VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) -1.
PAGE 5
ZXMP6A13FQ Typical Characteristics T = 25°C 10V 10 4.5V -ID Drain Current (A) -ID Drain Current (A) 10 3.5V 3V 1 2.5V 2V 0.1 -VGS 10V 5V T = 150°C 1 4.5V 3.5V 3V 2.5V 2V 0.1 1.5V -VGS 0.01 0.1 1 10 0.1 -ID Drain Current (A) -VDS = 10V 1 T = 150°C T = 25°C 1 2 3 4 5 -VGS Gate-Source Voltage (V) 2.5V 2V T = 25°C 3V 3.5V 4V 5V 1 7V 10V 0.1 1 -ID Drain Current (A) 10 On-Resistance v Drain Current ZXMP6A13FQ Document Number DS36684 Rev.
PAGE 6
ZXMP6A13FQ Typical Characteristics - continued C Capacitance (pF) VGS = 0V f = 1MHz CISS 200 COSS 100 CRSS 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 10 300 8 6 4 2 VDS = -30V ID = -0.9A 0 0 1 2 3 4 5 6 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits ZXMP6A13FQ Document Number DS36684 Rev. 2 - 2 6 of 8 www.diodes.
PAGE 7
ZXMP6A13FQ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ° 7 l l A H SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.
PAGE 8
ZXMP6A13FQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).